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AT49BV040T-20TC PDF预览

AT49BV040T-20TC

更新时间: 2024-11-07 23:04:23
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存电池
页数 文件大小 规格书
12页 214K
描述
4-Megabit 512K x 8 Single 2.7-volt Battery-Voltage Flash Memory

AT49BV040T-20TC 数据手册

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Features  
Single Voltage for Read and Write: 2.7V to 3.6V (BV), 3.0V to 3.6V (LV)  
Fast Read Access Time - 120 ns  
Internal Program Control and Timer  
16K bytes Boot Block With Lockout  
Fast Chip Erase Cycle Time - 10 seconds  
Byte-by-Byte Programming - 30 µs/Byte Typical  
Hardware Data Protection  
DATA Polling For End Of Program Detection  
Low Power Dissipation  
– 25 mA Active Current  
– 50 µA CMOS Standby Current  
Typical 10,000 Write Cycles  
Small Packaging  
4-Megabit  
(512K x 8)  
– 8 x 8 mm CBGA  
Single 2.7-volt  
Battery-Voltage™  
Flash Memory  
– 8 x 14 mm V-TSOP  
Description  
The AT49BV/LV040 are 3-volt-only, 4-megabit Flash memories organized as 524,288  
words of 8-bits each. Manufactured with Atmel’s advanced nonvolatile CMOS tech-  
nology, the devices offer access times to 120 ns with power dissipation of just 90 mW  
over the commercial temperature range. When the device is deselected, the CMOS  
standby current is less than 50 µA.  
AT49BV040  
AT49BV040T  
AT49LV040  
The device contains a user-enabled “boot block” protection feature. Two versions of  
the feature are available: the AT49BV/LV040 locates the boot block at lowest order  
addresses (“bottom boot”); the AT49BV/LV040T locates it at highest order addresses  
(“top boot”).  
AT49LV040T  
(continued)  
CBGA Top View  
Pin Configurations  
1
2
3
4
5
6
7
Pin Name Function  
A
B
C
D
E
F
A0 - A18  
CE  
Addresses  
GND I/O6 VCC VCC I/O2 OE GND  
A17 I/O7 I/O4 NC NC I/O0 CE  
A10 NC I/O5 NC I/O3 I/O1 A0  
A14 A13 A9 NC NC A6 A3  
A16 A11 WE NC A7 A4 A1  
A15 A12 A8 NC A18 A5 A2  
Chip Enable  
Output Enable  
Write Enable  
OE  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
PLCC Top View  
V - TSOP Top View (8 x 14 mm) or  
T - TSOP Top View (8 x 20 mm)  
0679AX-A–9/97  

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