Features
• Single 2.7V - 3.6V Supply
• Serial Interface Architecture
• Page Program Operation
– Single Cycle Reprogram (Erase and Program)
– 512 Pages (264 Bytes/Page) Main Memory
• Optional Page and Block Erase Operations
• One 264-Byte SRAM Data Buffer
• Internal Program and Control Timer
• Fast Page Program Time – 7 ms Typical
• 120 µs Typical Page to Buffer Transfer Time
• Low-Power Dissipation
– 4 mA Active Read Current Typical
– 2 µA CMOS Standby Current Typical
• 13 MHz Max Clock Frequency
• Hardware Data Protection Feature
• Serial Peripheral Interface (SPI) Compatible – Modes 0 and 3
• CMOS and TTL Compatible Inputs and Outputs
• Commercial and Industrial Temperature Ranges
1-Megabit
2.7-volt Only
Serial
DataFlash®
Description
AT45DB011
Preliminary
The AT45DB011 is a 2.7-volt only, serial interface Flash memory suitable for in-sys-
tem reprogramming. Its 1,081,344 bits of memory are organized as 512 pages of 264
bytes each. In addition to the main memory, the AT45DB011 also contains one SRAM
data buffer of 264 bytes. Unlike conventional Flash memories that are accessed ran-
domly with multiple address lines and a parallel interface, the DataFlash uses a serial
interface to sequentially access its data. The simple serial interface facilitates hard-
(continued)
Pin Configurations
SOIC
Pin Name
Function
SI
SCK
1
2
3
4
8
7
6
5
SO
CS
Chip Select
Serial Clock
Serial Input
Serial Output
GND
VCC
WP
RESET
CS
SCK
SI
SO
AT45DB011
Hardware Page
Write Protect Pin
WP
Preliminary 16-
Megabit 2.7-volt
Only Serial
RESET
Chip Reset
Ready/Busy
PLCC
RDY/BUSY
TSSOP Top View
Type 1
DataFlash
RDY/BUSY
1
2
3
4
5
6
7
14
CS
NC
NC
NC
NC
NC
SI
SCK
SI
5
6
7
8
9
29 WP
RESET
WP
13
12
11
10
9
28 RESET
27 RDY/BUSY
26 NC
SO
NC
NC
VCC
GND
SCK
SO
25 NC
NC 10
NC 11
NC 12
NC 13
24 NC
23 NC
22 NC
8
21 NC
Rev. 1103C–08/98
Note: PLCC package pins 16
and 17 are DON’T CONNECT
1