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AT45DB011D

更新时间： 2024-11-13 04:49:51
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
52页 1373K
描述
1-megabit 2.7-volt DataFlash

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中文翻译

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AT45DB011D 数据手册

 浏览型号AT45DB011D的Datasheet PDF文件第2页浏览型号AT45DB011D的Datasheet PDF文件第3页浏览型号AT45DB011D的Datasheet PDF文件第4页浏览型号AT45DB011D的Datasheet PDF文件第5页浏览型号AT45DB011D的Datasheet PDF文件第6页浏览型号AT45DB011D的Datasheet PDF文件第7页 
Features  
• Single 2.7V to 3.6V Supply  
• RapidS® Serial Interface: 66 MHz Maximum Clock Frequency  
– SPI Compatible Modes 0 and 3  
• User Configurable Page Size  
– 256 Bytes per Page  
– 264 Bytes per Page  
• Page Program Operation  
– Intelligent Programming Operation  
– 512 Pages (256/264 Bytes/Page) Main Memory  
• Flexible Erase Options  
1-megabit  
2.7-volt  
DataFlash  
– Page Erase (256 Bytes)  
– Block Erase (2 Kbytes)  
– Sector Erase (32 Kbytes)  
– Chip Erase (1 Mbits)  
• One SRAM Data Buffer (256/264 Bytes)  
• Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
• Low-power Dissipation  
– 7 mA Active Read Current Typical  
– 25 µA Standby Current Typical  
– 5 µA Deep Power-down Typical  
• Hardware and Software Data Protection Features  
– Individual Sector  
AT45DB011D  
Preliminary  
• Sector Lockdown for Secure Code and Data Storage  
– Individual Sector  
• Security: 128-byte Security Register  
– 64-byte User Programmable Space  
– Unique 64-byte Device Identifier  
• JEDEC Standard Manufacturer and Device ID Read  
• 100,000 Program/Erase Cycles Per Page Minimum  
• Data Retention – 20 Years  
• Industrial Temperature Range  
• Green (Pb/Halide-free/RoHS Compliant) Packaging Options  
1. Description  
The AT45DB011D is a 2.7V, serial-interface Flash memory ideally suited for a wide  
variety of digital voice-, image-, program code- and data-storage applications. The  
AT45DB011D supports RapidS serial interface for applications requiring very high  
speed operations. RapidS serial interface is SPI compatible for frequencies up to 66  
MHz. Its 1,081,344 bits of memory are organized as 512 pages of 256 bytes or 264  
bytes each. In addition to the main memory, the AT45DB011D also contains one  
SRAM buffer of 256/264 bytes. EEPROM emulation (bit or byte alterability) is easily  
handled with a self-contained three step read-modify-write operation. Unlike conven-  
tional Flash memories that are accessed randomly with multiple address lines and a  
parallel interface, the DataFlash® uses a RapidS serial interface to sequentially  
access its data. The simple sequential access dramatically reduces active pin count,  
facilitates hardware layout, increases system reliability, minimizes switching noise,  
and reduces package size.  
3639B–DFLASH–02/07  
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