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AT45DB011D-MH-Y PDF预览

AT45DB011D-MH-Y

更新时间: 2024-11-13 06:38:23
品牌 Logo 应用领域
爱特美尔 - ATMEL 闪存
页数 文件大小 规格书
52页 1609K
描述
1-megabit 2.7-volt Minimum DataFlash

AT45DB011D-MH-Y 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:SON包装说明:VSON, SOLCC8,.25
针数:8Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.67最大时钟频率 (fCLK):66 MHz
数据保留时间-最小值:20耐久性:100000 Write/Erase Cycles
JESD-30 代码:R-PDSO-N8JESD-609代码:e4
长度:6 mm内存密度:1048576 bit
内存集成电路类型:FLASH内存宽度:1
功能数量:1端子数量:8
字数:1048576 words字数代码:1000000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:1MX1
封装主体材料:PLASTIC/EPOXY封装代码:VSON
封装等效代码:SOLCC8,.25封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, VERY THIN PROFILE并行/串行:SERIAL
电源:3/3.3 V编程电压:2.7 V
认证状态:Not Qualified座面最大高度:0.6 mm
串行总线类型:SPI最大待机电流:0.000015 A
子类别:Flash Memories最大压摆率:0.025 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):2.7 V
标称供电电压 (Vsup):3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)端子形式:NO LEAD
端子节距:1.27 mm端子位置:DUAL
类型:NOR TYPE宽度:5 mm
写保护:HARDWARE/SOFTWAREBase Number Matches:1

AT45DB011D-MH-Y 数据手册

 浏览型号AT45DB011D-MH-Y的Datasheet PDF文件第2页浏览型号AT45DB011D-MH-Y的Datasheet PDF文件第3页浏览型号AT45DB011D-MH-Y的Datasheet PDF文件第4页浏览型号AT45DB011D-MH-Y的Datasheet PDF文件第5页浏览型号AT45DB011D-MH-Y的Datasheet PDF文件第6页浏览型号AT45DB011D-MH-Y的Datasheet PDF文件第7页 
Features  
Single 2.7V to 3.6V Supply  
RapidS® Serial Interface: 66 MHz Maximum Clock Frequency  
– SPI Compatible Modes 0 and 3  
User Configurable Page Size  
– 256 Bytes per Page  
– 264 Bytes per Page  
– Page Size Can Be Factory Pre-configured for 256 Bytes  
Page Program Operation  
– Intelligent Programming Operation  
– 512 Pages (256/264 Bytes/Page) Main Memory  
Flexible Erase Options  
1-megabit  
2.7-volt  
– Page Erase (256 Bytes)  
Minimum  
DataFlash  
– Block Erase (2 Kbytes)  
– Sector Erase (32 Kbytes)  
– Chip Erase (1 Mbits)  
One SRAM Data Buffer (256/264 Bytes)  
Continuous Read Capability through Entire Array  
– Ideal for Code Shadowing Applications  
Low-power Dissipation  
AT45DB011D  
– 7 mA Active Read Current Typical  
– 25 µA Standby Current Typical  
– 5 µA Deep Power-down Typical  
Hardware and Software Data Protection Features  
– Individual Sector  
Sector Lockdown for Secure Code and Data Storage  
– Individual Sector  
Security: 128-byte Security Register  
– 64-byte User Programmable Space  
– Unique 64-byte Device Identifier  
JEDEC Standard Manufacturer and Device ID Read  
100,000 Program/Erase Cycles Per Page Minimum  
Data Retention – 20 Years  
Industrial Temperature Range  
Green (Pb/Halide-free/RoHS Compliant) Packaging Options  
1. Description  
The AT45DB011D is a 2.7V, serial-interface Flash memory ideally suited for a wide  
variety of digital voice-, image-, program code- and data-storage applications. The  
AT45DB011D supports RapidS serial interface for applications requiring very high  
speed operations. RapidS serial interface is SPI compatible for frequencies up to 66  
MHz. Its 1,081,344 bits of memory are organized as 512 pages of 256 bytes or 264  
bytes each. In addition to the main memory, the AT45DB011D also contains one  
SRAM buffer of 256/264 bytes. EEPROM emulation (bit or byte alterability) is easily  
handled with a self-contained three step read-modify-write operation. Unlike conven-  
tional Flash memories that are accessed randomly with multiple address lines and a  
parallel interface, the DataFlash® uses a RapidS serial interface to sequentially  
access its data. The simple sequential access dramatically reduces active pin count,  
facilitates hardware layout, increases system reliability, minimizes switching noise,  
and reduces package size.  
3639E–DFLASH–5/08  

AT45DB011D-MH-Y 替代型号

型号 品牌 替代类型 描述 数据表
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