是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SON | 包装说明: | VSON, SOLCC8,.25 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8542.32.00.51 |
风险等级: | 5.67 | 最大时钟频率 (fCLK): | 66 MHz |
数据保留时间-最小值: | 20 | 耐久性: | 100000 Write/Erase Cycles |
JESD-30 代码: | R-PDSO-N8 | JESD-609代码: | e4 |
长度: | 6 mm | 内存密度: | 1048576 bit |
内存集成电路类型: | FLASH | 内存宽度: | 1 |
功能数量: | 1 | 端子数量: | 8 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | SYNCHRONOUS | 最高工作温度: | 85 °C |
最低工作温度: | -40 °C | 组织: | 1MX1 |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | VSON |
封装等效代码: | SOLCC8,.25 | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE, VERY THIN PROFILE | 并行/串行: | SERIAL |
电源: | 3/3.3 V | 编程电压: | 2.7 V |
认证状态: | Not Qualified | 座面最大高度: | 0.6 mm |
串行总线类型: | SPI | 最大待机电流: | 0.000015 A |
子类别: | Flash Memories | 最大压摆率: | 0.025 mA |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 2.7 V |
标称供电电压 (Vsup): | 3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | NO LEAD |
端子节距: | 1.27 mm | 端子位置: | DUAL |
类型: | NOR TYPE | 宽度: | 5 mm |
写保护: | HARDWARE/SOFTWARE | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
AT45DB642D-CNU | ATMEL |
功能相似 |
64-megabit 2.7-volt Dual-interface DataFlash |
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