Datasheet > AT29LV512-12JU

AT29LV512-12JU

更新时间： 2024-09-20 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
15页	280K
描述
512K (64K x 8) 3-volt Only Flash Memory

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AT29LV512-12JU 数据手册

Features

• Single Supply Voltage, Range 3V to 3.6V

• 3-volt Only Read and Write Operation

• Software Protected Programming

• Low-power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Fast Read Access Time – 120 ns

• Sector Program Operation

512K (64K x 8)

3-volt Only

Flash Memory

– Single-cycle Reprogram (Erase and Program)

– 512 Sectors (128 Bytes/Sector)

– Internal Address and Data Latches for 128 Bytes

• Fast Sector Program Cycle Time – 20 ms Max

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Green (Pb/Halide-free) Packaging Option

AT29LV512

1. Description

The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only

memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-

ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers

access times to 120 ns with power dissipation of just 54 mW over the industrial tem-

perature range. When the device is deselected, the CMOS standby current is less

than 50 µA. The device endurance is such that any sector can typically be written to in

excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV512 does not require

high input voltages for programming. Three-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 128 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0177O–FLASH–9/08

12 3 4 5 6 7...15

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与AT29LV512-12JU相关器件

型号	品牌	获取价格	描述	数据表
AT29LV512-12TU	ATMEL	获取价格	512K (64K x 8) 3-volt Only Flash Memory
AT29LV512-15JC	ATMEL	获取价格	512K 64K x 8 3-volt Only CMOS Flash Memory
AT29LV512-15JCT/R	ATMEL	获取价格	Flash, 64KX8, 150ns, PQCC32, PLASTIC, LCC-32
AT29LV512-15JI	ATMEL	获取价格	512K 64K x 8 3-volt Only CMOS Flash Memory
AT29LV512-15JIT/R	ATMEL	获取价格	Flash, 64KX8, 150ns, PQCC32, PLASTIC, LCC-32
AT29LV512-15JU	ATMEL	获取价格	Flash, 64KX8, 150ns, PQCC32, LEAD AND HALIDE FREE, PLASTIC, MS-016AE, LCC-32
AT29LV512-15JUT/R	ATMEL	获取价格	Flash, 64KX8, 150ns, PQCC32, PLASTIC, LCC-32
AT29LV512-15TC	ATMEL	获取价格	512K 64K x 8 3-volt Only CMOS Flash Memory
AT29LV512-15TCT/R	ATMEL	获取价格	Flash, 64KX8, 150ns, PDSO32, PLASTIC, TSOP-32
AT29LV512-15TI	ATMEL	获取价格	512K 64K x 8 3-volt Only CMOS Flash Memory

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