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AT29LV512-12TU PDF预览

AT29LV512-12TU

更新时间: 2024-11-10 06:38:19
品牌 Logo 应用领域
爱特美尔 - ATMEL /
页数 文件大小 规格书
15页 280K
描述
512K (64K x 8) 3-volt Only Flash Memory

AT29LV512-12TU 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TSOP1包装说明:8 X 20 MM, LEAD AND HALIDE FREE, PLASTIC, MO-142BD, TSOP1-32
针数:32Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.83最长访问时间:120 ns
命令用户界面:NO数据轮询:YES
耐久性:10000 Write/Erase CyclesJESD-30 代码:R-PDSO-G32
JESD-609代码:e3长度:18.4 mm
内存密度:524288 bit内存集成电路类型:FLASH
内存宽度:8湿度敏感等级:3
功能数量:1部门数/规模:512
端子数量:32字数:65536 words
字数代码:64000工作模式:ASYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:64KX8封装主体材料:PLASTIC/EPOXY
封装代码:TSOP1封装等效代码:TSSOP32,.8,20
封装形状:RECTANGULAR封装形式:SMALL OUTLINE, THIN PROFILE
页面大小:128 words并行/串行:PARALLEL
峰值回流温度(摄氏度):260电源:3.3 V
编程电压:3 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:128
最大待机电流:0.00005 A子类别:Flash Memories
最大压摆率:0.015 mA最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:Matte Tin (Sn)
端子形式:GULL WING端子节距:0.5 mm
端子位置:DUAL处于峰值回流温度下的最长时间:30
切换位:YES类型:NOR TYPE
宽度:8 mm最长写入周期时间 (tWC):20 ms
Base Number Matches:1

AT29LV512-12TU 数据手册

 浏览型号AT29LV512-12TU的Datasheet PDF文件第2页浏览型号AT29LV512-12TU的Datasheet PDF文件第3页浏览型号AT29LV512-12TU的Datasheet PDF文件第4页浏览型号AT29LV512-12TU的Datasheet PDF文件第5页浏览型号AT29LV512-12TU的Datasheet PDF文件第6页浏览型号AT29LV512-12TU的Datasheet PDF文件第7页 
Features  
Single Supply Voltage, Range 3V to 3.6V  
3-volt Only Read and Write Operation  
Software Protected Programming  
Low-power Dissipation  
– 15 mA Active Current  
– 50 µA CMOS Standby Current  
Fast Read Access Time – 120 ns  
Sector Program Operation  
512K (64K x 8)  
3-volt Only  
Flash Memory  
– Single-cycle Reprogram (Erase and Program)  
– 512 Sectors (128 Bytes/Sector)  
– Internal Address and Data Latches for 128 Bytes  
Fast Sector Program Cycle Time – 20 ms Max  
Internal Program Control and Timer  
DATA Polling for End of Program Detection  
Typical Endurance > 10,000 Cycles  
CMOS and TTL Compatible Inputs and Outputs  
Green (Pb/Halide-free) Packaging Option  
AT29LV512  
1. Description  
The AT29LV512 is a 3-volt-only in-system Flash programmable erasable read-only  
memory (PEROM). Its 512K of memory is organized as 65,536 words by 8 bits. Man-  
ufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 120 ns with power dissipation of just 54 mW over the industrial tem-  
perature range. When the device is deselected, the CMOS standby current is less  
than 50 µA. The device endurance is such that any sector can typically be written to in  
excess of 10,000 times.  
To allow for simple in-system reprogrammability, the AT29LV512 does not require  
high input voltages for programming. Three-volt-only commands determine the opera-  
tion of the device. Reading data out of the device is similar to reading from an  
EPROM. Reprogramming the AT29LV512 is performed on a sector basis; 128 bytes  
of data are loaded into the device and then simultaneously programmed.  
During a reprogram cycle, the address locations and 128 bytes of data are captured at  
microprocessor speed and internally latched, freeing the address and data bus for  
other operations. Following the initiation of a program cycle, the device will automati-  
cally erase the sector and then program the latched data using an internal control  
timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the  
end of a program cycle has been detected, a new access for a read or program can  
begin.  
0177O–FLASH–9/08  

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