Datasheet > AT29LV020_08

AT29LV020_08

更新时间： 2024-11-08 06:38:19

品牌	Logo	应用领域
爱特美尔 - ATMEL		/
页数	文件大小	规格书
16页	388K
描述
2-megabit (256K x 8) 3-volt Only Flash Memory

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数据手册

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AT29LV020_08 数据手册

Features

• Single Voltage, Range 3V to 3.6V Supply

• 3-volt Only Read and Write Operation

• Software Protected Programming

• Fast Read Access Time – 100 ns

• Low Power Dissipation

– 15 mA Active Current

– 50 µA CMOS Standby Current

• Sector Program Operation

2-megabit

(256K x 8)

3-volt Only

Flash Memory

– Single Cycle Reprogram (Erase and Program)

– 1024 Sectors (256 Bytes/Sector)

– Internal Address and Data Latches for 256 Bytes

• Two 8K Bytes Boot Blocks with Lockout

• Fast Sector Program Cycle Time – 20 ms

• Internal Program Control and Timer

• DATA Polling for End of Program Detection

• Typical Endurance > 10,000 Cycles

• CMOS and TTL Compatible Inputs and Outputs

• Green (Pb/Halide-free) Packaging Option

AT29LV020

1. Description

The AT29LV020 is a 3-volt-only in-system Flash programmable and erasable read

only memory (PEROM). Its 2 megabits of memory is organized as 262,144 bytes by

8 bits. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device

offers access times to 100 ns with power dissipation of just 54 mW over the industrial

temperature range. When the device is deselected, the CMOS standby current is less

than 50 µA. The device endurance is such that any sector can typically be written to in

excess of 10,000 times.

To allow for simple in-system reprogrammability, the AT29LV020 does not require

high input voltages for programming. Five-volt-only commands determine the opera-

tion of the device. Reading data out of the device is similar to reading from an

EPROM. Reprogramming the AT29LV020 is performed on a sector basis; 256 bytes

of data are loaded into the device and then simultaneously programmed.

During a reprogram cycle, the address locations and 256 bytes of data are captured at

microprocessor speed and internally latched, freeing the address and data bus for

other operations. Following the initiation of a program cycle, the device will automati-

cally erase the sector and then program the latched data using an internal control

timer. The end of a program cycle can be detected by DATA polling of I/O7. Once the

end of a program cycle has been detected, a new access for a read or program can

begin.

0565E–FLASH–9/08

12 3 4 5 6 7...16

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与AT29LV020_08相关器件

型号	品牌	获取价格	描述	数据表
AT29LV020-10JI	ATMEL	获取价格	Flash, 256KX8, 100ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT29LV020-10JU	ATMEL	获取价格	2-megabit (256K x 8) 3-volt Only Flash Memory
AT29LV020-10TI	ATMEL	获取价格	Flash, 256KX8, 100ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT29LV020-10TU	ATMEL	获取价格	2-megabit (256K x 8) 3-volt Only Flash Memory
AT29LV020-12JC	ATMEL	获取价格	Flash, 256KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT29LV020-12JI	ATMEL	获取价格	Flash, 256KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT29LV020-12JU	ATMEL	获取价格	Flash, 256KX8, 120ns, PQCC32, PLASTIC, MS-016AE, LCC-32
AT29LV020-12TU	ATMEL	获取价格	Flash, 256KX8, 120ns, PDSO32, 8 X 20 MM, PLASTIC, MO-142BD, TSOP1-32
AT29LV020-20	ATMEL	获取价格	2 Megabit 256K x 8 3-volt Only CMOS Flash Memory
AT29LV020-20DC	ETC	获取价格	x8 Flash EEPROM

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