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AT28HC64B-70TU-T PDF预览

AT28HC64B-70TU-T

更新时间： 2024-11-16 14:47:51
品牌 Logo 应用领域
美国微芯 - MICROCHIP 可编程只读存储器电动程控只读存储器电可擦编程只读存储器光电二极管内存集成电路
页数 文件大小 规格书
17页 388K
描述
EEPROM, 8KX8, 70ns, Parallel, CMOS, PDSO28

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AT28HC64B-70TU-T 技术参数

是否Rohs认证： 符合生命周期：Active
包装说明：TSOP1-28Reach Compliance Code：compliant
风险等级：5.72最长访问时间：70 ns
JESD-30 代码：R-PDSO-G28长度：11.8 mm
内存密度：65536 bit内存集成电路类型：EEPROM
内存宽度：8功能数量：1
端子数量：28字数：8192 words
字数代码：8000工作模式：ASYNCHRONOUS
最高工作温度：85 °C最低工作温度：-40 °C
组织：8KX8封装主体材料：PLASTIC/EPOXY
封装代码：TSOP1封装形状：RECTANGULAR
封装形式：SMALL OUTLINE, THIN PROFILE并行/串行：PARALLEL
峰值回流温度（摄氏度）：NOT SPECIFIED编程电压：5 V
座面最大高度：1.2 mm最大供电电压 (Vsup)：5.5 V
最小供电电压 (Vsup)：4.5 V标称供电电压 (Vsup)：5 V
表面贴装：YES技术：CMOS
温度等级：INDUSTRIAL端子形式：GULL WING
端子节距：0.55 mm端子位置：DUAL
处于峰值回流温度下的最长时间：NOT SPECIFIED宽度：8 mm
最长写入周期时间 (tWC)：10 msBase Number Matches：1

AT28HC64B-70TU-T 数据手册

 浏览型号AT28HC64B-70TU-T的Datasheet PDF文件第2页浏览型号AT28HC64B-70TU-T的Datasheet PDF文件第3页浏览型号AT28HC64B-70TU-T的Datasheet PDF文件第4页浏览型号AT28HC64B-70TU-T的Datasheet PDF文件第5页浏览型号AT28HC64B-70TU-T的Datasheet PDF文件第6页浏览型号AT28HC64B-70TU-T的Datasheet PDF文件第7页 
Features  
• Fast Read Access Time – 70 ns  
• Automatic Page Write Operation  
– Internal Address and Data Latches for 64 Bytes  
• Fast Write Cycle Times  
– Page Write Cycle Time: 10 ms Maximum (Standard)  
2 ms Maximum (Option – Ref. AT28HC64BF Datasheet)  
– 1 to 64-byte Page Write Operation  
• Low Power Dissipation  
64K (8K x 8)  
High-speed  
Parallel  
– 40 mA Active Current  
– 100 µA CMOS Standby Current  
• Hardware and Software Data Protection  
• DATA Polling and Toggle Bit for End of Write Detection  
• High Reliability CMOS Technology  
– Endurance: 100,000 Cycles  
EEPROM with  
Page Write and  
Software Data  
Protection  
– Data Retention: 10 Years  
• Single 5 V ±10% Supply  
• CMOS and TTL Compatible Inputs and Outputs  
• JEDEC Approved Byte-wide Pinout  
• Industrial Temperature Ranges  
• Green (Pb/Halide-free) Packaging Option Only  
1. Description  
AT28HC64B  
The AT28HC64B is a high-performance electrically-erasable and programmable read-  
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 55 ns with power dissipation of just 220 mW. When the device is  
deselected, the CMOS standby current is less than 100 µA.  
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
writing of up to 64 bytes simultaneously. During a write cycle, the addresses and 1 to  
64 bytes of data are internally latched, freeing the address and data bus for other  
operations. Following the initiation of a write cycle, the device will automatically write  
the latched data using an internal control timer. The end of a write cycle can be  
detected by DATA polling of I/O7. Once the end of a write cycle has been detected, a  
new access for a read or write can begin.  
Atmel’s AT28HC64B has additional features to ensure high quality and manufactura-  
bility. The device utilizes internal error correction for extended endurance and  
improved data retention characteristics. An optional software data protection mecha-  
nism is available to guard against inadvertent writes. The device also includes an  
extra 64 bytes of EEPROM for device identification or tracking.  
0274L–PEEPR–2/3/09  
1234567...17

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