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AT28HC64B-90PJ PDF预览

AT28HC64B-90PJ

更新时间: 2024-09-29 13:05:43
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
12页 664K
描述
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AT28HC64B-90PJ 数据手册

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AT28HC64B  
Features  
Fast Read Access Time - 55 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
40 mA Active Current  
100 µA CMOS Standby Current  
64K (8K x 8)  
High Speed  
CMOS  
Hardware and Software Data Protection  
DATA Polling and Toggle Bit for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 100,000 Cycles  
Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
E2PROM with  
Page Write and  
Software Data  
Protection  
Commercial and Industrial Temperature Ranges  
Description  
The AT28HC64B is a high-performance electrically erasable and programmable read  
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 55 ns with power dissipation of just 220 mW. When the device is  
deselected, the CMOS standby current is less than 100 µA.  
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
(continued)  
Pin Configurations  
Pin Name  
A0 - A12  
CE  
Function  
TSOP  
Top View  
AT28HC64B  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
PDIP, SOIC  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0274D  
2-267  

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