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AT28HC64B-90JC PDF预览

AT28HC64B-90JC

更新时间: 2024-11-15 22:53:59
品牌 Logo 应用领域
爱特美尔 - ATMEL 可编程只读存储器
页数 文件大小 规格书
12页 664K
描述
64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection

AT28HC64B-90JC 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:QFJ包装说明:PLASTIC, MS-016AE, LCC-32
针数:32Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8542.32.00.51
风险等级:5.66最长访问时间:90 ns
其他特性:100K ENDURANCE CYCLES; 10 YEARS DATA RETENTION; AUTOMATIC PAGE WRITE命令用户界面:NO
数据轮询:YES数据保留时间-最小值:10
耐久性:100000 Write/Erase CyclesJESD-30 代码:R-PQCC-J32
JESD-609代码:e0长度:13.97 mm
内存密度:65536 bit内存集成电路类型:EEPROM
内存宽度:8湿度敏感等级:2
功能数量:1端子数量:32
字数:8192 words字数代码:8000
工作模式:ASYNCHRONOUS最高工作温度:70 °C
最低工作温度:组织:8KX8
输出特性:3-STATE封装主体材料:PLASTIC/EPOXY
封装代码:QCCJ封装等效代码:LDCC32,.5X.6
封装形状:RECTANGULAR封装形式:CHIP CARRIER
页面大小:64 words并行/串行:PARALLEL
峰值回流温度(摄氏度):225电源:5 V
编程电压:5 V认证状态:Not Qualified
座面最大高度:3.55 mm最大待机电流:0.0001 A
子类别:EEPROMs最大压摆率:0.04 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):4.5 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:J BEND
端子节距:1.27 mm端子位置:QUAD
处于峰值回流温度下的最长时间:30切换位:YES
宽度:11.43 mm最长写入周期时间 (tWC):10 ms
Base Number Matches:1

AT28HC64B-90JC 数据手册

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AT28HC64B  
Features  
Fast Read Access Time - 55 ns  
Automatic Page Write Operation  
Internal Address and Data Latches for 64-Bytes  
Fast Write Cycle Times  
Page Write Cycle Time: 10 ms Maximum  
1 to 64-Byte Page Write Operation  
Low Power Dissipation  
40 mA Active Current  
100 µA CMOS Standby Current  
64K (8K x 8)  
High Speed  
CMOS  
Hardware and Software Data Protection  
DATA Polling and Toggle Bit for End of Write Detection  
High Reliability CMOS Technology  
Endurance: 100,000 Cycles  
Data Retention: 10 Years  
Single 5V ± 10% Supply  
CMOS and TTL Compatible Inputs and Outputs  
JEDEC Approved Byte-Wide Pinout  
E2PROM with  
Page Write and  
Software Data  
Protection  
Commercial and Industrial Temperature Ranges  
Description  
The AT28HC64B is a high-performance electrically erasable and programmable read  
only memory (EEPROM). Its 64K of memory is organized as 8,192 words by 8 bits.  
Manufactured with Atmel’s advanced nonvolatile CMOS technology, the device offers  
access times to 55 ns with power dissipation of just 220 mW. When the device is  
deselected, the CMOS standby current is less than 100 µA.  
The AT28HC64B is accessed like a Static RAM for the read or write cycle without the  
need for external components. The device contains a 64-byte page register to allow  
(continued)  
Pin Configurations  
Pin Name  
A0 - A12  
CE  
Function  
TSOP  
Top View  
AT28HC64B  
Addresses  
Chip Enable  
Output Enable  
Write Enable  
Data Inputs/Outputs  
No Connect  
OE  
WE  
I/O0 - I/O7  
NC  
DC  
Don’t Connect  
PLCC  
Top View  
PDIP, SOIC  
Top View  
Note: PLCC package pins 1 and  
17 are DON’T CONNECT.  
0274D  
2-267  

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EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64B-90JI ATMEL

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64K 8K x 8 High Speed CMOS E2PROM with Page Write and Software Data Protection
AT28HC64B-90JIT/R ATMEL

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EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64B-90JJ ATMEL

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EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32
AT28HC64B-90JJT/R ATMEL

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EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64B-90JL ATMEL

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EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, MS-016AE, LCC-32
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EEPROM, 8KX8, 90ns, Parallel, CMOS, PQCC32, PLASTIC, LCC-32
AT28HC64B-90JU ATMEL

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64K (8K x 8) High-speed Parallel EEPROM with Page Write and Software Data Protection
AT28HC64B-90JU MICROCHIP

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IC EEPROM 64KBIT 90NS 32PLCC
AT28HC64B-90JU-T MICROCHIP

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EEPROM, 8KX8, 90ns, Parallel, CMOS, PDSO32