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AT25XE041D-SHN-T

更新时间： 2024-10-29 02:49:03
品牌 Logo 应用领域
DIALOG /
页数 文件大小 规格书
127页 1486K
描述
4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

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AT25XE041D-SHN-T 数据手册

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AT25XE041D  
Datasheet  
4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory  
with Multi-I/O Support  
Features  
Voltage Range: 1.65 V - 3.6 V  
4 Mbit (2M x 2) Flash Memory  
Flexible 256-byte page erase architecture  
Serial Peripheral Interface (SPI) compatible  
Supports SPI modes 0 and 3  
Supports SPI single mode operation (1-1-1)  
Supports dual output operation (1-1-2)  
Supports quad output operation (1-1-4)  
Supports quad XiP operation (1-4-4 and 0-4-4)  
133 MHz maximum operating frequency: Clock-to-output of 8 ns  
Flexible, optimized erase architecture for code + data storage applications  
Uniform 256-Byte page erase  
Uniform 4-KByte block erase  
Uniform 32-KByte block erase  
Uniform 64-KByte block erase  
Full chip erase  
Flexible non-volatile block protection  
1 x 128-byte factory-programmed unique identifier  
3 x 128-byte, One Time Programmable (OTP) security registers  
Flexible programming  
Byte/Page program (1 to 256 Bytes)  
Single command page buffer direct Read-Modify-Write (page write with inclusive erase)  
Flexible 256-byte SRAM page buffer operation  
Sequential program mode capability  
Erase program suspend resume  
Software controlled Reset and Terminate commands  
Hardware reset option (through the HOLD pin)  
JEDEC hardware reset  
Low battery detect circuit  
Active interrupt device status capability  
Non-volatile status register configuration option  
JEDEC standard manufacturer and device ID read methodology  
Serial Flash Discoverable Parameters (SFDP) version 1.6  
Low power dissipation:  
30 µA standby current (typical)  
8.5 µA Deep Power-Down (DPD) current (typical)  
7 nA Ultra Deep Power Down (UDPD) current (typical)  
8.5 mA active read current (1-1-1 — 104 MHz)  
8.5 mA program current  
9.6 mA erase current  
User configurable and auto I/O pin drive levels  
Endurance: 100,000 program/erase cycles  
Data Retention: 20 years  
-40 oC to +85 oC operation  
Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options  
8-lead SOIC (150-mil)  
8-lead SOIC (208-mil)  
8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)  
8-ball WLCSP (3 x 2 x 3 ball matrix)  
Die/Wafer — Contact Dialog Semiconductor for more information  
Datasheet  
5-Aug-2021  
Revision H  
1
DS-AT25XE041D-84  
© 2021 Dialog Semiconductor  
1234567...127

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AT25XE081D-SHN-B DIALOG

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 		8-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE081D-SHN-T DIALOG

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 		8-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE081D-SSHN-B DIALOG

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 		8-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

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