Datasheet > AT25XE321D-SSHN-B

AT25XE321D-SSHN-B

更新时间： 2024-10-29 02:49:11

品牌	Logo	应用领域
DIALOG		/
页数	文件大小	规格书
124页	1492K
描述
32-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

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AT25XE321D

Datasheet

32-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory

with Multi-I/O Support

Features

 Voltage Range: 1.65 V - 3.6 V

 32 Mbit (2M x 16) Flash Memory

 Flexible 256-byte page erase architecture

 Serial Peripheral Interface (SPI) compatible

 Supports SPI modes 0 and 3

 Supports SPI single mode operation (1-1-1)

 Supports dual output operation (1-1-2)

 Supports quad output operation (1-1-4)

 Supports quad XiP operation (1-4-4 and 0-4-4)

 133 MHz maximum operating frequency

 Clock-to-output of 8 ns

 Flexible, optimized erase architecture for code + data storage applications

 Uniform 256-Byte page erase

 Uniform 4-kByte block erase

 Uniform 32-kByte block erase

 Uniform 64-kByte block erase

 Full chip erase

 Flexible non-volatile block protection

 1 x 128-byte factory-programmed unique identifier

 3 x 128-byte, One Time Programmable (OTP) security registers

 Flexible programming

 Byte/Page program (1 to 256 Bytes)

 Single command page buffer direct Read-Modify-Write (page write with inclusive erase)

 Flexible 256-byte SRAM page buffer operation

 Sequential program mode capability

 Erase program suspend resumeSoftware controlled Reset and Terminate commands

 Hardware reset option (via /HOLD pin)

 JEDEC hardware reset

 Low battery detect circuit

 Active interrupt device status capability

 Non-volatile status register configuration option

 JEDEC standard manufacturer and device ID read methodology

 Serial Flash Discoverable Parameters (SFDP) version 1.6

 Low power dissipation:

 26 µA standby current (typical)

 7 µA Deep Power-Down (DPD) current (typical)

 5-7 nA Ultra Deep Power Down (UDPD) current (typical)

 8.3 mA active read current (1-1-1 — 104 MHz)

 9.2 mA program current

 10.2 mA erase current

 User configurable and auto I/O pin drive levels

 Endurance

 100,000 program/erase cycles

 Data Retention

 20 years

 -40 ^oC to +85 ^oC operation

 Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options

 8-lead SOIC (150-mil)

 8-lead SOIC (208-mil)

 8-pad Ultra-thin DFN (5 x 6 x 0.6 mm)

 12-ball WLCSP (3 x 2 x 3 ball matrix)

 Die/Wafer — Contact Dialog Semiconductor for more information

Datasheet

2021-Aug-2

Revision J

DS-AT25XE321D-160

12 3 4 5 6 7...124

中文翻译

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与AT25XE321D-SSHN-B相关器件

型号	品牌	获取价格	描述	数据表
AT25XE321D-SSHN-T	DIALOG	获取价格	32-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE321D-UUN-T	DIALOG	获取价格	32-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE512C	DIALOG	获取价格	512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
AT25XE512C	RENESAS	获取价格	512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read C
AT25XE512C-MAHN-T	DIALOG	获取价格	512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
AT25XE512C-SSHN-B	DIALOG	获取价格	512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
AT25XE512C-SSHN-T	DIALOG	获取价格	512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
AT25XE512C-XMHN-B	DIALOG	获取价格	512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
AT25XE512C-XMHN-T	DIALOG	获取价格	512-Kbit, 1.65V Minimum SPI Serial Flash Memory with Dual-Read Support
AT25XV021A	DIALOG	获取价格	2-Mbit, 1.65V â 4.4V Range SPI Serial Flash

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