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AT25XE512C PDF预览

AT25XE512C

更新时间: 2024-10-29 14:58:11
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
41页 2511K
描述
512Kbit, 1.65V to 3.6V Range SPI Serial Flash Memory with Dual Read Support and low Read Current

AT25XE512C 数据手册

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AT25XE512C  
512-Kbit, 1.65V Minimum  
SPI Serial Flash Memory with Dual-Read Support  
Features  
Single 1.65V - 3.6V Supply  
Serial Peripheral Interface (SPI) Compatible  
Supports SPI Modes 0 and 3  
Supports Dual Output Read  
104MHz Maximum Operating Frequency  
Clock-to-Output (tV) of 6 ns  
Flexible, Optimized Erase Architecture for Code + Data Storage Applications  
Small (256-Byte) Page Erase  
Uniform 4-Kbyte Block Erase  
Uniform 32-Kbyte Block Erase  
Full Chip Erase  
Hardware Controlled Locking of Protected Sectors via WP Pin  
128-byte, One-Time Programmable (OTP) Security Register  
64 bytes factory programmed with a unique identifier  
64 bytes user programmable  
Flexible Programming  
Byte/Page Program (1 to 256 Bytes)  
Fast Program and Erase Times  
2ms Typical Page Program (256 Bytes) Time  
50ms Typical 4-Kbyte Block Erase Time  
400ms Typical 32-Kbyte Block Erase Time  
Automatic Checking and Reporting of Erase/Program Failures  
Software Controlled Reset  
JEDEC Standard Manufacturer and Device ID Read Methodology  
Low Power Dissipation  
200nA Ultra Deep Power Down current (Typical)  
4.5µA Deep Power-Down Current (Typical)  
25uA Standby current (Typical)  
3.5mA Active Read Current (Typical)  
Endurance: 100,000 Program/Erase Cycles  
Data Retention: 20 Years  
Temperature Range:-10°C to +85°C (1.65V to 3.6V), -40°C to +85° (1.7V to 3.6V)  
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
8-lead SOIC (150-mil)  
8-pad Ultra Thin DFN (2 x 3 x 0.6 mm)  
8-lead TSSOP Package  
DS-25XE512C–060F–02/2022  

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