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AT25XE161D-SHN-T

更新时间： 2024-10-29 02:48:55
品牌 Logo 应用领域
DIALOG /
页数 文件大小 规格书
127页 1501K
描述
16-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

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AT25XE161D-SHN-T 数据手册

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AT25XE161D  
Datasheet  
16-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory  
with Multi-I/O Support  
Features  
Voltage Range: 1.65 V - 3.6 V  
4 Mbit (2M x 2) Flash Memory  
Flexible 256-byte page erase architecture  
Serial Peripheral Interface (SPI) compatible  
Supports SPI modes 0 and 3  
Supports SPI single mode operation (1-1-1)  
Supports dual output operation (1-1-2)  
Supports quad output operation (1-1-4)  
Supports quad XiP operation (1-4-4 and 0-4-4)  
133 MHz maximum operating frequency  
Clock-to-output of 8 ns  
Flexible, optimized erase architecture for code + data storage applications  
Uniform 256-Byte page erase  
Uniform 4-KByte block erase  
Uniform 32-KByte block erase  
Uniform 64-KByte block erase  
Full chip erase  
Flexible non-volatile block protection  
1 x 128-byte factory-programmed unique identifier  
3 x 128-byte, One Time Programmable (OTP) security registers  
Flexible programming  
Byte/Page program (1 to 256 Bytes)  
Single command page buffer direct Read-Modify-Write (page write with inclusive erase)  
Flexible 256-byte SRAM page buffer operation  
Sequential program mode capability  
Erase program suspend resume  
Software controlled Reset and Terminate commands  
Hardware reset option (via /HOLD pin)  
JEDEC hardware reset  
Low battery detect circuit  
Active interrupt device status capability  
Non-volatile status register configuration option  
JEDEC standard manufacturer and device ID read methodology  
Serial Flash Discoverable Parameters (SFDP) version 1.6  
Low power dissipation:  
30 µA standby current (typical)  
8.2 µA Deep Power-Down (DPD) current (typical)  
7 nA Ultra Deep Power Down (UDPD) current (typical)  
8.6 mA active read current (1-1-1 — 108 MHz)  
9.2 mA program current  
10.2 mA erase current  
User configurable and auto I/O pin drive levels  
Endurance  
100,000 program/erase cycles  
Data Retention  
20 years  
-40 oC to +85 oC operation  
Industry standard green (Pb/Halide-free/RoHS Compliant) Package Options  
8-lead SOIC (150-mil)  
8-lead SOIC (208-mil)  
8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)  
8-ball WLCSP (3 x 2 x 3 ball matrix)  
Die/Wafer — Contact Dialog Semiconductor for more information  
Datasheet  
2021-Aug-5  
Revision H  
10  
DS-AT25XE161D-158  
© 2021 Dialog Semiconductor  
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AT25XE321D-SHN-T DIALOG

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