Datasheet > AT25XE041D

AT25XE041D

更新时间： 2024-11-08 14:58:19

品牌	Logo	应用领域
瑞萨 - RENESAS		/
页数	文件大小	规格书
119页	1879K
描述
4Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

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AT25XE041D 数据手册

Datasheet

AT25XE041D

4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

Features

▪ Voltage Range: 1.65 V - 3.6 V

▪ Erase program suspend resume

▪ 4-Mbit Flash Memory

▪ Hardware reset option (through the HOLD pin)

▪ JEDEC hardware reset

▪ Flexible 256-byte page erase architecture

▪ Serial Peripheral Interface (SPI) compatible

• Supports SPI modes 0 and 3

▪ Low-battery detect circuit

▪ Active interrupt device status capability

▪ Non-volatile status register configuration option

• Supports SPI single mode operation (1-1-1)

• Supports dual output operation (1-1-2)

• Supports quad output operation (1-1-4)

▪ JEDEC standard manufacturer and device ID read

methodology

▪ Serial Flash Discoverable Parameters (SFDP)

version 1.6

• Supports quad XiP operation (1-4-4 and

0-4-4)

▪ Low power dissipation:

▪ 133 MHz maximum operating frequency: Clock-to-

output of 8 ns

• 30 µA standby current (typical)

▪ Flexible, optimized erase architecture for code

and data storage applications

• 8.5 µA Deep Power-Down (DPD) current

(typical)

• Uniform 256-Byte page erase

• Uniform 4-kByte block erase

• 7 nA Ultra Deep Power Down (UDPD) current

(typical)

• 8.5 mA active read current (1-1-1 — 104 MHz)

• 8.5 mA program current

• Uniform 32-kByte block erase

• Uniform 64-kByte block erase

• Full chip erase

• 9.6 mA erase current

▪ User-configurable and auto I/O pin drive levels

▪ Endurance: 100,000 program/erase cycles

▪ Data Retention: 20 years

▪ Flexible non-volatile block protection

▪ 1 x 128-byte factory-programmed unique identifier

▪ 3 x 128-byte, One Time Programmable (OTP)

security registers

▪ -40 ^oC to +85 ^oC operation

▪ Flexible programming

▪ Industry standard green (Pb/Halide-free/RoHS

Compliant) Package Options

• Byte/Page program (1 to 256 Bytes)

• 8-lead SOIC (150-mil)

• Single command page buffer direct Read-

Modify-Write (page write with inclusive erase)

• 8-lead SOIC (208-mil)

• Flexible 256-byte SRAM page buffer

operation

• 8-pad Ultra-thin DFN (2 x 3 x 0.6 mm)

• 8-ball WLCSP (3 x 2 x 3 ball matrix)

• Sequential program mode capability

• Die/Wafer — Contact Renesas Electronics for

more information

▪ Software controlled Reset and Terminate

commands

DS-AT25XE041D-084 Rev. K

Jun 1, 2022

Page 1

12 3 4 5 6 7...119

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与AT25XE041D相关器件

型号	品牌	获取价格	描述	数据表
AT25XE041D-DWF	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE041D-MAHN-T	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE041D-SHN-B	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE041D-SHN-T	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE041D-SSHN-B	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE041D-SSHN-T	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE041D-UUN-T	DIALOG	获取价格	4-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE081D	DIALOG	获取价格	8-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE081D	RENESAS	获取价格	8Mbit, 1.65 V to 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support
AT25XE081D-DWF	DIALOG	获取价格	8-Mbit, 1.65 V - 3.6 V Range SPI Serial Flash Memory with Multi-I/O Support

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