Datasheet > AT25SF081-SSHD-B

AT25SF081-SSHD-B

更新时间： 2024-10-29 00:55:39

品牌	Logo	应用领域
其他 - ETC		时钟光电二极管内存集成电路
页数	文件大小	规格书
47页	3039K
描述
8-Mbit, 2.5V Minimum SPI Serial Flash Memory with Dual-I/O and Quad-IO Support

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AT25SF081-SSHD-B 数据手册

AT25SF081

8-Mbit, 2.5V Minimum

SPI Serial Flash Memory with Dual-I/O and Quad-IO Support

PRELIMINARY DATASHEET

Features



Single 2.5V - 3.6V Supply

Serial Peripheral Interface (SPI) Compatible

 Supports SPI Modes 0 and 3

 Supports Dual and Quad Output Read



104MHz Maximum Operating Frequency

 Clock-to-Output (t_V) of 6 ns

Flexible, Optimized Erase Architecture for Code + Data Storage Applications

 Uniform 4-Kbyte Block Erase

 Uniform 32-Kbyte Block Erase

 Uniform 64-Kbyte Block Erase



Full Chip Erase

Hardware Controlled Locking of Protected Blocks via WP Pin

3 Protected Programmable Security Register Pages

Flexible Programming

 Byte/Page Program (1 to 256 Bytes)

Fast Program and Erase Times



 0.7ms Typical Page Program (256 Bytes) Time

 70ms Typical 4-Kbyte Block Erase Time

 300ms Typical 32-Kbyte Block Erase Time

 600ms Typical 64-Kbyte Block Erase Time



JEDEC Standard Manufacturer and Device ID Read Methodology

Low Power Dissipation

 2µA Deep Power-Down Current (Typical)

 10µA Standby current (Typical)

 4mA Active Read Current (Typical)



Endurance: 100,000 Program/Erase Cycles

Data Retention: 20 Years

Complies with Full Industrial Temperature Range

Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options

 8-lead SOIC (150-mil and 208-mil)

 8-pad Ultra Thin DFN (5 x 6 x 0.6 mm and 2 x 3 x 0.6 mm) ⁽¹⁾

 8-lead TSSOP (4 x 4 mm)⁽¹⁾

1. TSSOP and DFN packages are not currently in production. Package outline dimensions are subject 

to change.

DS-25SF081A–045B–5/2014

12 3 4 5 6 7...47

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AT25SF161B	RENESAS	获取价格	16Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support
AT25SF161B-DWF	DIALOG	获取价格	16-Mbit SPI Serial Flash Memory with Dual I/O and Quad I/O Support
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