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AT25SF128A PDF预览

AT25SF128A

更新时间: 2024-10-29 14:58:15
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
60页 1811K
描述
128Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support

AT25SF128A 数据手册

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Datasheet  
AT25SF128A  
128-Mbit Serial NOR Flash Memory with Dual I/O and Quad I/O Support  
Features  
Single voltage operation with range of 2.7 V to 3.6 V  
Hardware and software Write Protection:  
128 Mbit (32 x 4 Mbit physical block) NOR Flash  
Memory  
• Hardware-controlled locking of protected sector  
via WP pin  
Serial Peripheral Interface (SPI) compatible support:  
• Supports SPI modes 0 and 3  
• Three 256-byte OTP-capable security registers  
• Write protect all or part of memory via software  
with top/bottom block selection  
• Supports dual and quad output read  
Maximum operating frequency:  
Serial Flash Discoverable Parameter (SFDP)  
register  
• 133 MHz maximum operating frequency at 85 oC  
• 120 MHz maximum operating frequency at 105 oC  
Read operations:  
Low power dissipation:  
• 13 µA standby current at 85 oC  
• 20 µA standby current at 105 oC  
• 2 µA deep power down current at 85 oC  
• 5 µA deep power down current at 105 oC  
Endurance:  
• 100K program/erase cycles at 85 oC  
• 10K program/erase cycles at 105 oC  
Data retention: 20 years  
• 70 MHz normal read  
• 120 MHz fast read  
• 133 MHz Quad Output fast read  
• Dual I/O data transfer rate up to 240 Mbps  
• Quad I/O data transfer rate up to 480 Mbps  
• Quad Output data transfer rate up to 532 Mbps  
• Continuous read with 8/16/32/64-byte wrap  
Temperature range:  
• Industrial: -40 oC to 85 oC  
Flexible, optimized erase architecture, including  
erase suspend and resume  
• Extended Temperature Range: -40 oC to 105 oC  
Flexible programming:  
Industry standard green (Pb/Halide-free/RoHS  
compliant) package options  
• Byte/Page program (1 to 256 Bytes)  
• Program suspend and resume  
• 8-lead 208-mil Wide SOIC  
• 16-lead 300-mil Wide SOIC  
• 8-pad 5 x 6 x 0.6 mm DFN  
• 8-pad 6 x 8 x 0.9 mm DFN  
Fast program and erase times:  
• 0.6 ms typical page (256 byte) program time  
• 70 ms typical 4-kbyte block erase time  
• 150 ms typical 32-kbyte block erase time  
• 250 ms typical 64-kbyte block erase time  
• Full chip erase: 30 s typical  
DS-AT25SF128A-168 Rev. M  
2023-11-17  
Page 1  
© 2023 Renesas Electronics  

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