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AT25SF161B PDF预览

AT25SF161B

更新时间: 2024-10-29 14:57:55
品牌 Logo 应用领域
瑞萨 - RENESAS /
页数 文件大小 规格书
61页 1838K
描述
16Mbit, 2.7V Minimum SPI Serial Flash Memory with Dual I/O Support

AT25SF161B 数据手册

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Datasheet  
AT25SF161B  
16-Mbit SPI Serial Flash Memory with Dual I/O and Quad I/O Support  
Features  
Serial Peripheral Interface (SPI) Compatible  
• Supports SPI modes 0 and 3  
• Supports single input/output operations (1,1,1)  
• Supports dual input and dual output operations (1-1-2), (1-2-2), (0-2-2)  
• Supports quad input and quad output operations (1-1-4), (1-4-4), (0-4-4)  
Continuous Read mode (with 8/16/32/64 bytes wrap) - optimized for XiP  
16-Mbit Flash Memory  
108 MHz Maximum Operating Frequency  
Two Supply Voltage Options Available:  
• 2.7 V - 3.6 V  
• 2.5 V - 3.6.V  
Serial Flash Discoverable Parameters (SFDP, JESD216B) support  
OTP Memory  
• Three Protected Programmable Security Register Pages (Page size: 256 bytes)  
• 64-bit factory programmable UID register  
Hardware Write Protection (WP pin)  
Software Write protection (Programmable non-volatile control registers)  
Program and Erase Suspend and Resume  
Byte programming size: up to 256 bytes  
Erase Size and Duration  
• Uniform 4-kbyte Block Erase (50 ms typical)  
• Uniform 32-kbyte Block Erase (120 ms typical)  
• Uniform 64-kbyte Block Erase (200 ms typical)  
• Full Chip Erase (5.5 seconds typical)  
Low Power Dissipation  
• Standby Current (15 µA maximum)  
• Deep-Power-Down Current (1.5 µA maximum)  
Endurance: 100,000 Program and Erase Cycles  
Data Retention: 20 Years  
Industrial Temperature Range (-40 oC to 85 oC)  
Industry Standard Green (Pb/Halide-free/RoHS Compliant) Package Options  
• 8-lead SOIC (0.150” Narrow and 0.208” Wide)  
• 8-pad Ultra-Thin DFN (5 x 6 x 0.6 mm)  
• 8-ball WLCSP (3 x 2 x 3 grid array)  
• Die Wafer Form  
• Other Package Options (contact Renesas Electronics)  
DS-AT25SF161B-188 Rev. F  
Jun 3, 2022  
Page 1  
© 2022 Renesas Electronics  

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