Datasheet > AS80P06S-Q1

AS80P06S-Q1

更新时间： 2024-10-31 18:07:11

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AS80P06S-Q1 数据手册

AS80P06S-Q1

P-Channel Enhancement Mode MOSFET

Product Summary

V_(BR)DSS

R_DS(on)MAX

8.5mΩ@-10V

I_D

-60V

-80A

Feature

Application



Split gate trench MOSFET technology

Low RDS(on) & FOM



Power management

Portable equipment

Excellent stability and uniformity

Suffix “-Q1” for AEC-Q101

Package

Circuit diagram

DFN5X6-8L

Marking

80P06

XXXXX

Document ID

AS-1150376

Issued Date

2013/03/08

Revised Date

2022/05/16

Revision

Page.

Page 1

12 3 4 5 6

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AS80SSTVF16857-48TT	ALSC	获取价格	DDR 14-Bit Registered Buffer
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AS80SSTVF16857-48VR	ALSC	获取价格	DDR 14-Bit Registered Buffer
AS80SSTVF16857-48VT	ALSC	获取价格	DDR 14-Bit Registered Buffer
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