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AS7C33512PFS16A2-150TQI PDF预览

AS7C33512PFS16A2-150TQI

更新时间: 2024-10-28 15:27:59
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
14页 370K
描述
Standard SRAM, 512KX16, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100

AS7C33512PFS16A2-150TQI 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.51
最长访问时间:10 ns其他特性:FLOW-THROUGH OR PIPELINED ARCHITECTURE
JESD-30 代码:R-PQFP-G100JESD-609代码:e0
长度:20 mm内存密度:8388608 bit
内存集成电路类型:STANDARD SRAM内存宽度:16
功能数量:1端子数量:100
字数:524288 words字数代码:512000
工作模式:SYNCHRONOUS最高工作温度:85 °C
最低工作温度:-40 °C组织:512KX16
封装主体材料:PLASTIC/EPOXY封装代码:LQFP
封装形状:RECTANGULAR封装形式:FLATPACK, LOW PROFILE
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
认证状态:Not Qualified座面最大高度:1.6 mm
最大供电电压 (Vsup):3.465 V最小供电电压 (Vsup):3.135 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子面层:TIN LEAD端子形式:GULL WING
端子节距:0.65 mm端子位置:QUAD
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:14 mm
Base Number Matches:1

AS7C33512PFS16A2-150TQI 数据手册

 浏览型号AS7C33512PFS16A2-150TQI的Datasheet PDF文件第2页浏览型号AS7C33512PFS16A2-150TQI的Datasheet PDF文件第3页浏览型号AS7C33512PFS16A2-150TQI的Datasheet PDF文件第4页浏览型号AS7C33512PFS16A2-150TQI的Datasheet PDF文件第5页浏览型号AS7C33512PFS16A2-150TQI的Datasheet PDF文件第6页浏览型号AS7C33512PFS16A2-150TQI的Datasheet PDF文件第7页 
April 2002  
Preliminary  
AS7C33512PFS16A  
AS7C33512PFS18A  
®
3.3V 512K × 16/18 pipeline burst synchronous SRAM  
Features  
• Asynchronous output enable control  
• Available in 100-pin TQFP and 119-ball BGA package  
• Byte write enables  
• Multiple chip enables for easy expansion  
• 3.3V core power supply  
• Organization: 524,288 words × 16 or 18 bits  
• Fast clock speeds to 166 MHz in LVTTL/LVCMOS  
• Fast clock to data access: 3.5/3.8/4.0/5.0 ns  
• Fast OE access time: 3.5/3.8/4.0/5.0 ns  
• Fully synchronous register-to-register operation  
• Single register “Flow-through” option  
• Single-cycle deselect  
- Dual-cycle deselect also available (AS7C33512PFD16A/  
AS7C33512PFD18A)  
• 2.5V or 3.3V I/O operation with separate V  
DDQ  
• 30 mW typical standby power in power down mode  
1
• NTD™ pipeline architecture available  
(AS7C33512NTD16A/AS7C33512NTD18A)  
• Available in both 2 chip enable and 3 chip enable  
- 2 CE part number is AS7C33512PFS16A or AS7C33512PFS18A2  
®
1
1. Pentium is a registered trademark of Intel Corporation. NTD™ is a  
• Pentium® compatible architecture and timing  
trademark of Alliance Semiconductor Corporation. All trademarks men-  
tioned in this document are the property of their respective owners.  
Logic block diagram  
LBO  
Burst logic  
CLK  
ADV  
ADSC  
ADSP  
CLK  
CS  
CLR  
512K × 16/18  
Memory  
19 17  
19  
19  
AddresQs  
register  
D
array  
A[18:0]  
CS  
CLK  
16/18  
16/18  
GWE  
D
Q
DQb  
BW  
b
Byte Write  
registers  
BWE  
CLK  
D
Q
DQa  
2
BW  
a
Byte Write  
CLK  
registers  
CE0  
CE1  
CE2  
OE  
D EnableQ  
register  
Input  
Output  
registers  
registers  
CE  
CLK  
CLK  
CLK  
D EnableQ  
delay  
Power  
down  
ZZ  
register  
CLK  
OE  
16/18  
DQ[a,b]  
FT  
Selection guide  
–166  
–150  
6.6  
–133  
7.5  
133  
4
–100  
10  
Units  
ns  
Minimum cycle time  
6
Maximum pipelined clock frequency  
Maximum pipelined clock access time  
Maximum operating current  
166  
3.5  
475  
130  
30  
150  
3.8  
100  
5
MHz  
ns  
450  
110  
30  
425  
100  
30  
325  
90  
mA  
mA  
mA  
Maximum standby current  
Maximum CMOS standby current (DC)  
30  
4/15/02; v.1.5  
Alliance Semiconductor  
1 of 14  
Copyright © Alliance Semiconductor. All rights reserved.  

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