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AS7C33512NTF18A-10TQI PDF预览

AS7C33512NTF18A-10TQI

更新时间: 2024-11-24 20:14:23
品牌 Logo 应用领域
美国芯成 - ISSI 静态存储器内存集成电路
页数 文件大小 规格书
18页 425K
描述
ZBT SRAM, 512KX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQPF-100

AS7C33512NTF18A-10TQI 技术参数

是否无铅:含铅是否Rohs认证:不符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.52
Is Samacsys:N最长访问时间:10 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e0长度:20 mm
内存密度:9437184 bit内存集成电路类型:ZBT SRAM
内存宽度:18功能数量:1
端子数量:100字数:524288 words
字数代码:512000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:512KX18封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:TIN LEAD
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:14 mmBase Number Matches:1

AS7C33512NTF18A-10TQI 数据手册

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AS7C33512NTF18A  
November 2004  
®
3.3V 512K×18 Flowthrough Synchronous SRAM with NTDTM  
Features  
• Organization: 524,288 words × 18 bits  
• NTDarchitecture for efficient bus operation  
• Fast clock to data access: 7.5/8.5/10 ns  
• Fast OE access time: 3.5/4.0 ns  
• Fully synchronous operation  
• Clock enable for operation hold  
• Multiple chip enables for easy expansion  
• 3.3 core power supply  
• 2.5V or 3.3V I/O operation with separate VDDQ  
• 30 mW typical standby power  
• Self-timed write cycles  
• Flow-through mode  
• Asynchronous output enable control  
• Available in 100-pin TQFP  
• Interleaved or linear burst modes  
• Snooze mode for standby operation  
• Byte write enables  
Logic Block Diagram  
19  
19  
A[18:0]  
Q
D
Address  
register  
burst logic  
CLK  
D
Q
CE0  
CE1  
CE2  
Write delay  
addr. registers  
CLK  
19  
R/W  
BWa  
BWb  
Control  
logic  
CLK  
ADV / LD  
FT  
512K x 18  
SRAM  
array  
LBO  
ZZ  
CLK  
18  
18  
DQ [a,b]  
Data  
input  
register  
D
Q
18  
18  
CLK  
18  
CLK  
CEN  
Output  
buffer  
OE  
18  
OE  
DQ [a,b]  
Selection Guide  
-75  
8.5  
7.5  
280  
120  
30  
-85  
-10  
12  
Units  
ns  
Minimum cycle time  
10  
8.5  
260  
110  
30  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
10  
ns  
220  
100  
30  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
11/8/04, v. 1.1  
Alliance Semiconductor  
P. 1 of 18  
Copyright © Alliance Semiconductor. All rights reserved.  

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