5秒后页面跳转
AS7C332MFT18A-75TQC PDF预览

AS7C332MFT18A-75TQC

更新时间: 2024-01-17 19:06:15
品牌 Logo 应用领域
ALSC 内存集成电路静态存储器
页数 文件大小 规格书
19页 512K
描述
3.3V 2M x 18 Flow-through synchronous SRAM

AS7C332MFT18A-75TQC 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.51
Is Samacsys:N最长访问时间:7.5 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:37748736 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:100字数:2097152 words
字数代码:2000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:2MX18封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:INDUSTRIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C332MFT18A-75TQC 数据手册

 浏览型号AS7C332MFT18A-75TQC的Datasheet PDF文件第1页浏览型号AS7C332MFT18A-75TQC的Datasheet PDF文件第3页浏览型号AS7C332MFT18A-75TQC的Datasheet PDF文件第4页浏览型号AS7C332MFT18A-75TQC的Datasheet PDF文件第5页浏览型号AS7C332MFT18A-75TQC的Datasheet PDF文件第6页浏览型号AS7C332MFT18A-75TQC的Datasheet PDF文件第7页 
AS7C332MFT18A  
®
32 Mb Synchronous SRAM products list1,2  
Org  
Part Number  
Mode  
PL-SCD  
PL-SCD  
PL-SCD  
PL-DCD  
PL-DCD  
PL-DCD  
FT  
Speed  
2MX18  
1MX32  
1MX36  
2MX18  
1MX32  
1MX36  
2MX18  
1MX32  
1MX36  
2MX18  
1MX32  
1MX36  
2MX18  
1MX32  
1MX36  
AS7C332MPFS18A  
AS7C331MPFS32A  
AS7C331MPFS36A  
AS7C332MPFD18A  
AS7C331MPFD32A  
AS7C331MPFD36A  
AS7C332MFT18A  
AS7C331MFT32A  
AS7C331MFT36A  
AS7C332MNTD18A  
AS7C331MNTD32A  
AS7C331MNTD36A  
AS7C332MNTF18A  
AS7C331MNTF32A  
AS7C331MNTF36A  
200/166/133 MHz  
200/166/133 MHz  
200/166/133 MHz  
200/166/133 MHz  
200/166/133 MHz  
200/166/133 MHz  
7.5/8.5/10 ns  
FT  
7.5/8.5/10 ns  
FT  
7.5/8.5/10 ns  
NTD-PL  
NTD-PL  
NTD-PL  
NTD-FT  
NTD-FT  
NTD-FT  
200/166/133 MHz  
200/166/133 MHz  
200/166/133 MHz  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
7.5/8.5/10 ns  
1 Core Power Supply: VDD = 3.3V + 0.165V  
2 I/O Supply Voltage: VDDQ = 3.3V + 0.165V for 3.3V I/O  
VDDQ = 2.5V + 0.125V for 2.5V I/O  
PL-SCD  
PL-DCD  
FT  
:
:
:
Pipelined Burst Synchronous SRAM - Single Cycle Deselect  
Pipelined Burst Synchronous SRAM - Double Cycle Deselect  
Flow-through Burst Synchronous SRAM  
1
TM  
NTD -PL  
:
:
Pipelined Burst Synchronous SRAM with NTD  
TM  
NTD-FT  
Flow-through Burst Synchronous SRAM with NTD  
1NTD: No Turnaround Delay. NTDTM is a trademark of Alliance Semiconductor Corporation. All trademarks mentioned in this document are the property of  
their respective owners.  
12/23/04, v 1.3  
Alliance Semiconductor  
2 of 19  

与AS7C332MFT18A-75TQC相关器件

型号 品牌 描述 获取价格 数据表
AS7C332MFT18A-75TQCN ALSC 3.3V 2M x 18 Flow-through synchronous SRAM

获取价格

AS7C332MFT18A-75TQI ALSC 3.3V 2M x 18 Flow-through synchronous SRAM

获取价格

AS7C332MFT18A-75TQIN ALSC 3.3V 2M x 18 Flow-through synchronous SRAM

获取价格

AS7C332MFT18A-85TQC ALSC 3.3V 2M x 18 Flow-through synchronous SRAM

获取价格

AS7C332MFT18A-85TQCN ALSC 3.3V 2M x 18 Flow-through synchronous SRAM

获取价格

AS7C332MFT18A-85TQI ALSC 3.3V 2M x 18 Flow-through synchronous SRAM

获取价格