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AS7C33256PFD36A-133BC PDF预览

AS7C33256PFD36A-133BC

更新时间: 2024-10-29 03:18:39
品牌 Logo 应用领域
ALSC 静态存储器
页数 文件大小 规格书
14页 584K
描述
Standard SRAM, 256KX36, 10ns, CMOS, PBGA119, 14 X 20 MM, BGA-119

AS7C33256PFD36A-133BC 数据手册

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AS7C33256PFD32A  
AS7C33256PFD36A  
®
TQFP thermal resistance  
Description  
Conditions  
Symbol  
Ty p i c a l  
40  
1–layer  
4–layer  
θ
Thermal resistance  
JA  
Test conditions follow standard test methods and  
procedures for measuring thermal impedance,  
per EIA/JESD51  
(junction to ambient)1  
θ
22  
JA  
JC  
Thermal resistance  
θ
8
(junction to top of case)1  
1 This parameter is sampled.  
DC electrical characteristics  
–166  
–150  
–133  
–100  
Parameter  
Symbol  
Test conditions  
VDD = Max, VIN = GND to VDD  
OE VIH, VDD = Max,  
Min Max Min Max Min Max Min Max Unit  
Input leakage  
current1  
|ILI|  
2
2
2
2
2
2
2
2
µA  
µA  
Output leakage  
current  
|ILO  
|
VOUT = GND to VDD  
2
Operating power  
supply current  
ICC  
CE0 = VIL, CE1 = VIH, CE2 = VIL,  
f = fMax, IOUT = 0 mA  
475  
450  
425  
325 mA  
(Pipelined)  
2
ICC  
Operating power  
supply current  
CE0 = VIL, CE1 = VIH, CE2 = VIL,  
f = fMax, IOUT = 0 mA  
325  
325  
300  
300 mA  
90  
(Flow-  
through)  
ISB  
Deselected, f = fMax, ZZ VIL  
130  
30  
110  
30  
100  
30  
Deselected, f = 0, ZZ 0.2V  
all VIN 0.2V or VDD – 0.2V  
Standby power  
supply current  
ISB1  
30  
mA  
Deselected, f = f , ZZ  
V
– 0.2V  
Max  
DD  
ISB2  
30  
30  
30  
30  
All VIN VIL or VIH  
VOL  
IOL = 8 mA, VDDQ = 3.465V  
IOH = –4 mA, VDDQ = 3.135V  
0.4  
0.4  
0.4  
0.4  
V
Output voltage  
VOH  
2.4  
2.4  
2.4  
2.4  
1 LBO pin has an internal pull-up and input leakage = 10 µA.  
2 I given with no output loading. I increases with faster cycles times and greater output loading.  
CC CC  
DC electrical characteristics for 2.5V I/O operation  
–166  
–150  
–133  
–100  
Parameter  
Symbol  
|ILO  
Test conditions  
Min Max Min Max Min Max Min Max Unit  
Output leakage  
current  
OE VIH, VDD = Max,  
OUT = GND to VDD  
|
–1  
1
–1  
1
–1  
1
–1  
1
µA  
V
V
VOL  
IOL = 2 mA, VDDQ = 2.65V  
IOH = –2 mA, VDDQ = 2.35V  
0.7  
0.7  
0.7  
0.7  
Output voltage  
VOH  
1.7  
1.7  
1.7  
1.7  
4/15/02; v.1.8  
Alliance Semiconductor  
P. 7 of 14  

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