是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Obsolete | 零件包装代码: | QFP |
包装说明: | LQFP, | 针数: | 100 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.A |
HTS代码: | 8542.32.00.41 | 风险等级: | 5.52 |
Is Samacsys: | N | 最长访问时间: | 10 ns |
其他特性: | FLOW-THROUGH ARCHITECTURE | JESD-30 代码: | R-PQFP-G100 |
JESD-609代码: | e0 | 长度: | 20 mm |
内存密度: | 18874368 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 18 | 功能数量: | 1 |
端子数量: | 100 | 字数: | 1048576 words |
字数代码: | 1000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 70 °C | 最低工作温度: | |
组织: | 1MX18 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | LQFP | 封装形状: | RECTANGULAR |
封装形式: | FLATPACK, LOW PROFILE | 并行/串行: | PARALLEL |
峰值回流温度(摄氏度): | NOT SPECIFIED | 认证状态: | Not Qualified |
座面最大高度: | 1.6 mm | 最大供电电压 (Vsup): | 3.465 V |
最小供电电压 (Vsup): | 3.135 V | 标称供电电压 (Vsup): | 3.3 V |
表面贴装: | YES | 技术: | CMOS |
温度等级: | COMMERCIAL | 端子面层: | TIN LEAD |
端子形式: | GULL WING | 端子节距: | 0.65 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 14 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
AS7C331MFT18A-10TQCN | ALSC |
获取价格 |
3.3V 1M x 18 Flow-through synchronous SRAM | |
AS7C331MFT18A-10TQCN | ISSI |
获取价格 |
Standard SRAM, 1MX18, 10ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100 | |
AS7C331MFT18A-10TQI | ISSI |
获取价格 |
Standard SRAM, 1MX18, 10ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | |
AS7C331MFT18A-10TQI | ALSC |
获取价格 |
3.3V 1M x 18 Flow-through synchronous SRAM | |
AS7C331MFT18A-10TQIN | ALSC |
获取价格 |
3.3V 1M x 18 Flow-through synchronous SRAM | |
AS7C331MFT18A-10TQIN | ISSI |
获取价格 |
Standard SRAM, 1MX18, 10ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100 | |
AS7C331MFT18A-68TQC | ISSI |
获取价格 |
Standard SRAM, 1MX18, 6.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | |
AS7C331MFT18A-68TQCN | ISSI |
获取价格 |
Standard SRAM, 1MX18, 6.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100 | |
AS7C331MFT18A-68TQI | ISSI |
获取价格 |
Standard SRAM, 1MX18, 6.8ns, CMOS, PQFP100, 14 X 20 MM, TQFP-100 | |
AS7C331MFT18A-68TQIN | ISSI |
获取价格 |
Standard SRAM, 1MX18, 6.8ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100 |