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AS7C331MFT18A-10TQCN PDF预览

AS7C331MFT18A-10TQCN

更新时间: 2024-11-02 20:32:19
品牌 Logo 应用领域
美国芯成 - ISSI 时钟静态存储器内存集成电路
页数 文件大小 规格书
19页 512K
描述
Standard SRAM, 1MX18, 10ns, CMOS, PQFP100, 14 X 20 MM, LEAD FREE, TQFP-100

AS7C331MFT18A-10TQCN 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:QFP
包装说明:LQFP,针数:100
Reach Compliance Code:compliantECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41风险等级:5.52
Is Samacsys:N最长访问时间:10 ns
其他特性:FLOW-THROUGH ARCHITECTUREJESD-30 代码:R-PQFP-G100
JESD-609代码:e3长度:20 mm
内存密度:18874368 bit内存集成电路类型:STANDARD SRAM
内存宽度:18功能数量:1
端子数量:100字数:1048576 words
字数代码:1000000工作模式:SYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX18封装主体材料:PLASTIC/EPOXY
封装代码:LQFP封装形状:RECTANGULAR
封装形式:FLATPACK, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):245认证状态:Not Qualified
座面最大高度:1.6 mm最大供电电压 (Vsup):3.465 V
最小供电电压 (Vsup):3.135 V标称供电电压 (Vsup):3.3 V
表面贴装:YES技术:CMOS
温度等级:COMMERCIAL端子面层:MATTE TIN
端子形式:GULL WING端子节距:0.65 mm
端子位置:QUAD处于峰值回流温度下的最长时间:30
宽度:14 mmBase Number Matches:1

AS7C331MFT18A-10TQCN 数据手册

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January 2005  
AS7C331MFT18A  
®
3.3V 1M x 18 Flow-through synchronous SRAM  
Features  
• Organization: 1,048,576 words x18 bits  
• Fast clock to data access: 6.8/7.5/8.5/10 ns  
• Fast OE access time: 3.5/4.0 ns  
• Fully synchronous flow-through operation  
• Asynchronous output enable control  
• Available 100-pin TQFP packages  
• Multiple chip enables for easy expansion  
• 3.3 V core power supply  
• 2.5 V or 3.3V I/O operation with separate VDDQ  
• Linear or interleaved burst control  
• Common data inputs and data outputs  
• Snooze mode for reduced power-standby  
Individual byte write and global write  
Logic block diagram  
LBO  
CLK  
ADV  
ADSC  
ADSP  
CLK  
CS  
CLR  
Burst logic  
1M x 18  
Memory  
array  
20 18  
20  
20  
Q
D
A[19:0]  
Address  
CS  
register  
CLK  
18  
18  
2
GWE  
BWb  
D
DQb  
Byte Write  
registers  
CLK  
Q
BWE  
BWa  
D
Q
DQa  
Byte Write  
registers  
CLK  
CE0  
CE1  
OE  
Output  
buffers  
D
Q
Q
Input  
registers  
Enable  
register  
CE  
CLK  
CE2  
CLK  
D
Enable  
delay  
register  
CLK  
Power  
down  
ZZ  
OE  
18  
DQ[a,b]  
Selection guide  
-68  
7.5  
6.8  
285  
90  
-75  
8.5  
7.5  
275  
90  
-85  
10  
-10  
12  
Units  
ns  
Minimum cycle time  
Maximum clock access time  
Maximum operating current  
Maximum standby current  
8.5  
250  
80  
10  
ns  
230  
80  
mA  
mA  
mA  
Maximum CMOS standby current (DC)  
60  
60  
60  
60  
1/21/05, v 1.4  
Alliance Semiconductor  
1 of 19  
Copyright © Alliance Semiconductor. All rights reserved.  

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AS7C331MFT18A-75TQCN ISSI

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