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AS5C512K8EC-20/883C PDF预览

AS5C512K8EC-20/883C

更新时间: 2024-10-28 06:37:55
品牌 Logo 应用领域
AUSTIN 内存集成电路静态存储器
页数 文件大小 规格书
16页 402K
描述
512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT

AS5C512K8EC-20/883C 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DLCC
包装说明:SON, SOLCC36,.45针数:36
Reach Compliance Code:compliantECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.04
Is Samacsys:N最长访问时间:20 ns
I/O 类型:COMMONJESD-30 代码:R-CDSO-N36
JESD-609代码:e0长度:23.368 mm
内存密度:4194304 bit内存集成电路类型:STANDARD SRAM
内存宽度:8功能数量:1
端子数量:36字数:524288 words
字数代码:512000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:512KX8输出特性:3-STATE
封装主体材料:CERAMIC, METAL-SEALED COFIRED封装代码:SON
封装等效代码:SOLCC36,.45封装形状:RECTANGULAR
封装形式:SMALL OUTLINE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED电源:5 V
认证状态:Not Qualified筛选级别:MIL-STD-883 Class C
座面最大高度:2.54 mm最大待机电流:0.015 A
最小待机电流:4.5 V子类别:SRAMs
最大压摆率:0.09 mA最大供电电压 (Vsup):5.5 V
最小供电电压 (Vsup):4.5 V标称供电电压 (Vsup):5 V
表面贴装:YES技术:CMOS
温度等级:MILITARY端子面层:TIN LEAD
端子形式:NO LEAD端子节距:1.27 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:11.4935 mmBase Number Matches:1

AS5C512K8EC-20/883C 数据手册

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SRAM  
AS5C512K8  
Austin Semiconductor, Inc.  
512K x 8 SRAM  
PIN ASSIGNMENT  
(Top View)  
HIGH SPEED SRAM with  
REVOLUTIONARY PINOUT  
36-Pin SOJ (DJ & ECJ)  
36-Pin CLCC (EC)  
AVAILABLE AS MILITARY  
SPECIFICATIONS  
•SMD 5962-95600  
•SMD 5962-95613  
•MIL-STD-883  
FEATURES  
• Ultra High Speed Asynchronous Operation  
• Fully Static, No Clocks  
• Multiple center power and ground pins for improved  
noise immunity  
• Easy memory expansion with CE\ and OE\  
options  
• All inputs and outputs are TTL-compatible  
• Single +5V Power Supply +/- 10%  
• Data Retention Functionality Testing (Contact Factory)  
• Cost Efficient Plastic Packaging  
• Extended Testing Over -55ºC to +125ºC for plastics  
• Plastic 36 pin PSOJ is fully compatible with the  
Ceramic 36 pin SOJ  
36-Pin Flat Pack (F)  
• 3.3V Future Offering  
OPTIONS  
• Timing  
MARKING  
15ns access  
17ns access  
20ns access  
25ns access  
35ns access  
45ns access  
-15  
-17  
-20  
-25  
-35  
-45  
GENERAL DESCRIPTION  
• Operating Temperature Ranges  
Military (-55oC to +125oC)  
Industrial (-40oC to +85oC)  
The AS5C512K8 is a high speed SRAM. It offers flexibility in  
high-speed memory applications, with chip enable (CE\) and output  
enable (OE\) capabilities. These features can place the outputs in  
High-Z for additional flexibility in system design.  
XT  
IT  
• Package(s)  
Ceramic LCC  
Ceramic Flatpack  
Plastic SOJ  
Writing to these devices is accomplished when write enable (WE\)  
and CE\ inputs are both LOW. Reading is accomplished when WE\  
remains HIGH and CE\ and OE\ go LOW.  
As a option, the device can be supplied offering a reduced power  
standby mode, allowing system designers to meet low standby power  
requirements. This device operates from a single +5V power supply  
and all inputs and outputs are fully TTL-compatible.  
The AS5C512K8DJ offers the convenience and reliability of the  
AS5C512K8 SRAM and has the cost advantage of a durable plastic.  
The AS5C512K8DJ is footprint compatible with 36 pin CSOJ  
package of the SMD 5692-95600.  
EC  
F
DJ  
ECJ  
No. 210  
No. 307  
No. 903  
No.503  
Ceramic SOJ  
• 2V data retention/low power  
• Radiation Tolerant (EPI)  
L (Consult Factory)  
E
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS5C512K8  
Rev. 4.5 7/01  
1

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