Datasheet > AS5C512K8EC-20E/XT

AS5C512K8EC-20E/XT

更新时间： 2024-10-28 19:50:23

品牌	Logo	应用领域
MICROSS		静态存储器内存集成电路
页数	文件大小	规格书
16页	397K
描述
Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, LCC-36

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SRAM

AS5C512K8

Austin Semiconductor, Inc.

512K x 8 SRAM

PIN ASSIGNMENT

(Top View)

HIGH SPEED SRAM with

REVOLUTIONARY PINOUT

36-Pin SOJ (DJ & ECJ)

36-Pin CLCC (EC)

AVAILABLE AS MILITARY

SPECIFICATIONS

•SMD 5962-95600

•SMD 5962-95613

•MIL-STD-883

FEATURES

• Ultra High Speed Asynchronous Operation

• Fully Static, No Clocks

• Multiple center power and ground pins for improved

noise immunity

• Easy memory expansion with CE\ and OE\

options

• All inputs and outputs are TTL-compatible

• Single +5V Power Supply +/- 10%

• Data Retention Functionality Testing (Contact Factory)

• Cost Efficient Plastic Packaging

• Extended Testing Over -55ºC to +125ºC for plastics

• Plastic 36 pin PSOJ is fully compatible with the

Ceramic 36 pin SOJ

36-Pin Flat Pack (F)

• 3.3V Future Offering

OPTIONS

• Timing

MARKING

15ns access

17ns access

20ns access

25ns access

35ns access

45ns access

-15

-17

-20

-25

-35

-45

GENERAL DESCRIPTION

• Operating Temperature Ranges

Military (-55^oC to +125^oC)

Industrial (-40^oC to +85^oC)

The AS5C512K8 is a high speed SRAM. It offers flexibility in

high-speed memory applications, with chip enable (CE\) and output

enable (OE\) capabilities. These features can place the outputs in

High-Z for additional flexibility in system design.

• Package(s)

Ceramic LCC

Ceramic Flatpack

Plastic SOJ

Writing to these devices is accomplished when write enable (WE\)

and CE\ inputs are both LOW. Reading is accomplished when WE\

remains HIGH and CE\ and OE\ go LOW.

As a option, the device can be supplied offering a reduced power

standby mode, allowing system designers to meet low standby power

requirements. This device operates from a single +5V power supply

and all inputs and outputs are fully TTL-compatible.

The AS5C512K8DJ offers the convenience and reliability of the

AS5C512K8 SRAM and has the cost advantage of a durable plastic.

The AS5C512K8DJ is footprint compatible with 36 pin CSOJ

package of the SMD 5692-95600.

ECJ

No. 210

No. 307

No. 903

No.503

Ceramic SOJ

• 2V data retention/low power

• Radiation Tolerant (EPI)

L (Consult Factory)

For more products and information

please visit our web site at

www.austinsemiconductor.com

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

AS5C512K8

Rev. 4.5 7/01

12 3 4 5 6 7...16

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与AS5C512K8EC-20E/XT相关器件

型号	品牌	获取价格	描述	数据表
AS5C512K8EC-20L	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8EC-20L	MICROSS	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, LCC-36
AS5C512K8EC-20L/883C	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8EC-20L/H	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8EC-20L/IT	MICROSS	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, CLCC-36
AS5C512K8EC-20L/XT	MICROSS	获取价格	Standard SRAM, 512KX8, 20ns, CMOS, CDSO36, CERAMIC, CLCC-36
AS5C512K8EC-20LE/883C	ETC	获取价格	x8 SRAM
AS5C512K8EC-20LE/IT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8EC-20LE/XT	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT
AS5C512K8EC-25	AUSTIN	获取价格	512K x 8 SRAM HIGH SPEED SRAM with REVOLUTIONARY PINOUT

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