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AS58C1001DCJ-20/883C

更新时间： 2024-12-01 06:37:51
品牌 Logo 应用领域
AUSTIN 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
页数 文件大小 规格书
19页 249K
描述
EEPROM

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AS58C1001DCJ-20/883C 数据手册

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EEPROM  
AS58C1001  
Austin Semiconductor, Inc.  
128K x 8 EEPROM  
EEPROM Memory  
AVAILABLE AS MILITARY  
PIN ASSIGNMENT  
(Top View)  
32-Pin CFP (F & SF), 32-Pin CSOJ (DCJ)  
SPECIFICATIONS  
l SMD 5962-38267  
l MIL-STD-883  
1
2
3
4
5
6
7
8
RDY/BUSY\  
A16  
A14  
A12  
A7  
32 Vcc  
31 A15  
30 RES\  
29 WE\  
28 A13  
27 A8  
FEATURES  
l High speed: 150, 200, and 250ns  
l Data Retention: 10 Years  
l Low power dissipation, active current (20mW/MHz (TYP)),  
standby current (100µW(MAX))  
l Single +5V (+10%) power supply  
l Data Polling and Ready/Busy Signals  
l Erase/Write Endurance (10,000 cycles in a page mode)  
l Software Data protection Algorithm  
l Data Protection Circuitry during power on/off  
l Hardware Data Protection with RES pin  
l Automatic Programming:  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
I/O 0  
I/O 1  
I/O 2  
Vss  
26 A9  
25 A11  
24 OE\  
23 A10  
22 CE\  
21 I/O 7  
20 I/O 6  
19 I/O 5  
18 I/O 4  
17 I/O 3  
9
10  
11  
12  
13  
14  
15  
16  
Automatic Page Write: 10ms (MAX)  
128 Byte page size  
GENERAL DESCRIPTION  
The Austin Semiconductor, Inc. AS58C1001 is a 1 Megabit CMOS  
Electrically Erasable Programmable Read Only Memory (EEPROM)  
organized as 131, 072 x 8 bits. The AS58C1001 is capable or in  
system electrical Byte and Page reprogrammability.  
The AS58C1001 achieves high speed access, low power consump-  
tion, and a high level of reliability by employing advanced MNOS  
memory technology and CMOS process and circuitry technology and  
CMOS process and circuitry technology.  
This device has a 128-Byte Page Programming function to make its  
erase and write operations faster. The AS58C1001 features Data  
Polling and a Ready/Busy signal to indicate completion of erase and  
programming operations.  
This EEPROM provides several levels of data protection. Hard-  
ware data protection is provided with the RES pin, in addition to noise  
protection on the WE signal and write inhibit during power on and off.  
Software data protection is implemented using JEDEC Optional Stan-  
dard algorithm.  
OPTIONS  
MARKINGS  
l Timing  
150ns access  
200ns access  
250ns access  
-15  
-20  
-25  
l Packages  
Ceramic Flat Pack  
Radiation Shielded Ceramic FP* SF  
F
No. 306  
No. 305  
Ceramic SOJ  
DCJ No. 508  
l Operating Temperature Ranges  
-Military (-55oC to +125oC)  
-Industrial (-40oC to +85oC)  
XT  
IT  
*NOTE: Package lid is connected to ground (Vss).  
PIN NAME  
A0 to A16  
I/O0 to I/O7 Data input/output  
FUNCTION  
Address input  
The AS58C1001 is designed for high reliability in the most de-  
manding applications. Data retention is specified for 10 years and  
erase/write endurance is guaranteed to a minimum of 10,000 cycles in  
the Page Mode.  
OE\  
CE\  
WE\  
Vcc  
Vss  
Output enable  
Chip enable  
Write enable  
Power supply  
Ground  
For more products and information  
please visit our web site at  
www.austinsemiconductor.com  
RDY/Busy\  
RES\  
Ready busy  
Reset  
Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.  
AS58C1001  
Rev. 4.0 3/01  
1
1234567...19

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AS58C1001DCJ-20IT AUSTIN

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AS58C1001DCJ-25/883C AUSTIN

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