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ARS25 PDF预览

ARS25

更新时间: 2024-02-22 02:20:15
品牌 Logo 应用领域
TSC /
页数 文件大小 规格书
2页 73K
描述
25.0 AMPS. High Current Plastic Silicon Rectifiers

ARS25 技术参数

生命周期:Contact Manufacturer包装说明:O-PEDB-N2
Reach Compliance Code:unknown风险等级:5.66
其他特性:LOW POWER LOSS应用:GENERAL PURPOSE
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.1 V
JESD-30 代码:O-PEDB-N2最大非重复峰值正向电流:400 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:25 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:DISK BUTTON最大重复峰值反向电压:1000 V
最大反向电流:10 µA表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

ARS25 数据手册

 浏览型号ARS25的Datasheet PDF文件第2页 
ARS25 / AR25 SERIES  
25.0 AMPS. High Current Plastic Silicon Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
25.0 Amperes  
ARS  
AR  
Features  
Plastic material used carries Underwriters  
Laboratory Classification 94V-O  
Low cost construction utilizing void-free molded  
plastic technique  
Low cost  
Diffused junction  
Low leakage  
High surge capability  
High temperature soldering guaranteed:  
260oC for 10 seconds  
Mechanical Data  
Case: Molded plastic case  
Terminals: Plated terminals, solderable per  
MIL-STD-202, Method 208  
Polarity: Color ring denotes cathode end  
Weight: 0.07 ounce, 1.8 grams  
Mounting position: Any  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
ARS ARS ARS ARS ARS ARS ARS  
25A  
AR  
25A  
25B  
AR  
25B  
25D  
AR  
25D  
25G  
AR  
25G  
25J  
AR  
25J  
25K 25M  
AR AR  
25K 25M  
Symbol  
Type Number  
Units  
Maximum Recurrent Peak Revere Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
50 100 200 400 600 800 1000  
35 70 140 280 420 560 700  
50 100 200 400 600 800 1000  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
@Tc = 150  
I(AV)  
25  
A
A
V
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated  
Load (JEDEC method ) at TJ=150oC  
IFSM  
400  
1.0  
Maximum Instantaneous Forward Voltage  
@ 25A  
VF  
IR  
Maximum DC Reverse Current @ Tc=25℃  
at Rated DC Blocking Voltage @ Tc=100℃  
5.0  
250  
3.0  
uA  
uA  
uS  
Typical Reverse Recovery Time (Note 2)  
Trr  
Cj  
Typical Junction Capacitance (Note 1)  
TJ=25oC  
300  
pF  
Typical Thermal Resistance ( Note 3 )  
Operating and Storage Temperature Range  
/W  
RθJC  
TJ, TSTG  
1.0  
-50 to +175  
Notes: 1. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
2. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
3. Thermal Resistance from Junction to Case, Singe Side Cooled.  
- 500 -  

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