Datasheet > ARS251

ARS251

更新时间： 2025-08-04 12:52:03

品牌	Logo	应用领域
KISEMICONDUCTOR		二极管
页数	文件大小	规格书
2页	189K
描述
BUTTON DIODES VOLTAGE RANGE 100 TO 600 VOLTSCURRENT 25AMPS

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中文翻译

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数据手册

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ARS251 数据手册

AR251/ARS251

THRU

AR256/ARS256

KI SEMICONDUCTOR

Features

Low leakage

BUTTON DIODES

Low forward voltage drop

High current capability

High forward surge current capability

VOLTAGE RANGE

100 TO 600 VOLTS

CURRENT 25AMPS

ARS

.185(4.7)

.165(4.2)

.185(4.7)

.165(4.2)

Mechanical Data

.250(6.4)

.235(6.0)

.250(6.4)

.235(6.0)

Case: transfer molded plastic

Technology: vcauum soldered

Polarity: color ring denotes cathode

Lead: Plated lead, solderable per MIL-STD-202E method 208C

Mounting position: Any

Weigth: AR 1.80 grams, ARS 1.60 grams

.410(10.4)

.380( 9.7)

.346(8.8)

.327(8.2)

DIA

.225(5.7)

.215(5.5)

.225(5.7)

.215(5.5)

DIA

Dimensions in inches and millimeters

Maximum Ratings and Electrical Charactristics

Rating at 25^oC ambient temperature unless otherwise specified

Single phase, half wave, 60Hz, resistive or inductive load

For capacitive load derate current by 20%

AR251

ARS251

100

AR252

ARS252

200

AR253

ARS253

300

AR254

ARS254

400

AR256

ARS256

600

Parameters

Symbols

Units

V_RRM

V_RMS

V_DC

Maximum repetitive peak reverse voltage

Maximum RM S voltage

Volts

140

210

280

420

Maximum DC blocking voltage

100

200

300

400

600

Maximum Average rectified forward current

I_o

Amps

at T_C=110^oC

Peak forward surge current 8.3mS single

half sine-wave superimposed on rated load

(JE DEC Method)

I_FSM

400

Amps

I²t

A²S

Rating for fusing(t<8.3ms)

Maximum instantaneous forward voltage

drop at 100A

664

1.1

V_F

Volts

Maximum DC reverse current T_A=25^oC

5.0

450

I_R

at rated DC blocking voltage T_A=150^oC

^oC/W

^oC

R_θJC

Typical thermal resistance

1.0

Operating and storage temperature

-65 to +175

T_J,T_STG

Notes: 1.Enough heatsink must be considered in application.

KI SEMICONDUCTOR

中文翻译

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