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ARS254 PDF预览

ARS254

更新时间: 2024-02-16 23:25:49
品牌 Logo 应用领域
KISEMICONDUCTOR 二极管
页数 文件大小 规格书
2页 189K
描述
BUTTON DIODES VOLTAGE RANGE 100 TO 600 VOLTSCURRENT 25AMPS

ARS254 技术参数

生命周期:Active包装说明:O-PEDB-N2
Reach Compliance Code:unknown风险等级:5.76
应用:GENERAL PURPOSE配置:SINGLE
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1.05 VJESD-30 代码:O-PEDB-N2
最大非重复峰值正向电流:400 A元件数量:1
相数:1端子数量:2
最高工作温度:175 °C最低工作温度:-65 °C
最大输出电流:25 A封装主体材料:PLASTIC/EPOXY
封装形状:ROUND封装形式:DISK BUTTON
最大重复峰值反向电压:400 V最大反向电流:5 µA
反向测试电压:400 V表面贴装:YES
端子形式:NO LEAD端子位置:END
Base Number Matches:1

ARS254 数据手册

 浏览型号ARS254的Datasheet PDF文件第2页 
AR251/ARS251  
THRU  
AR256/ARS256  
KI SEMICONDUCTOR  
Features  
Low leakage  
BUTTON DIODES  
Low forward voltage drop  
High current capability  
High forward surge current capability  
VOLTAGE RANGE  
100 TO 600 VOLTS  
CURRENT 25AMPS  
AR  
ARS  
.185(4.7)  
.165(4.2)  
.185(4.7)  
.165(4.2)  
Mechanical Data  
.250(6.4)  
.235(6.0)  
.250(6.4)  
.235(6.0)  
Case: transfer molded plastic  
Technology: vcauum soldered  
Polarity: color ring denotes cathode  
Lead: Plated lead, solderable per MIL-STD-202E method 208
Mounting position: Any  
Weigth: AR 1.80 grams, ARS 1.60 grams  
.410(10.4)  
.380( 9.7)  
.346(8.8)  
.327(8.2)  
DIA  
DIA  
.225(5.7)  
.215(5.5)  
.225(5.7)  
.215(5.5)  
DIA  
DIA  
Dimensions in inches and millimeters  
Maximum Ratings and Electrical Charactristics  
Rating at 25oC ambient temperature unless otherwise specified  
Single phase, half wave, 60Hz, resistive or inductive load  
For capacitive load derate current by 20%  
AR251  
ARS251  
100  
AR252  
ARS252  
200  
AR253  
ARS253  
300  
AR254  
ARS254  
400  
AR256  
ARS256  
600  
Parameters  
Symbols  
Units  
VRRM  
VRMS  
VDC  
Maximum repetitive peak reverse voltage  
Maximum RM S voltage  
Volts  
Volts  
Volts  
70  
140  
210  
280  
420  
Maximum DC blocking voltage  
100  
200  
300  
400  
600  
Maximum Average rectified forward current  
Io  
25  
Amps  
at TC=110oC  
Peak forward surge current 8.3mS single  
half sine-wave superimposed on rated load  
(JE DEC Method)  
IFSM  
400  
Amps  
I2t  
A2S  
Rating for fusing(t<8.3ms)  
Maximum instantaneous forward voltage  
drop at 100A  
664  
1.1  
VF  
Volts  
Maximum DC reverse current TA=25oC  
5.0  
450  
IR  
uA  
at rated DC blocking voltage TA=150oC  
oC/W  
oC  
RθJC  
Typical thermal resistance  
1.0  
Operating and storage temperature  
-65 to +175  
TJ,TSTG  
Notes: 1.Enough heatsink must be considered in application.  
KI SEMICONDUCTOR  

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