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ARRAYRDM-0112A20

更新时间： 2024-11-27 02:49:51
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 2146K
描述
Silicon Photomultipliers (SiPM), RDM-Series 1 x 12 Monolithic Array

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ARRAYRDM-0112A20 数据手册

 浏览型号ARRAYRDM-0112A20的Datasheet PDF文件第2页浏览型号ARRAYRDM-0112A20的Datasheet PDF文件第3页浏览型号ARRAYRDM-0112A20的Datasheet PDF文件第4页浏览型号ARRAYRDM-0112A20的Datasheet PDF文件第5页浏览型号ARRAYRDM-0112A20的Datasheet PDF文件第6页 
Silicon Photomultipliers  
(SiPM), RDM-Series  
1 x 12 Monolithic Array  
Advance Information  
ArrayRDM-0112A20-QFN  
www.onsemi.com  
The ArrayRDM−0112A20−QFN is a monolithic 1 × 12 array of  
Silicon Photomultiplier (SiPM) pixels based on the market−leading  
RDM process. The RDM process has been specifically developed to  
create products that give high PDE at the NIR wavelengths used for  
LiDAR and 3D ranging applications.  
In order to meet the requirements for automotive LiDAR  
applications, this product is qualified to AEC−Q102 and developed in  
accordance with IATF 16949.  
An evaluation board (ArrayRDM−0112A20−GEVB) is also  
available for this product.  
KEY SENSOR AND PACKAGE SPECIFICATIONS  
Parameter  
Silicon Process  
Number of Pixels  
Array Configuration  
Pixel Size  
Value  
RDM  
Comments  
12  
1 × 12  
Monolithic silicon array  
1.12 × 0.47 mm  
0.49 mm  
20 mm  
Pixel Pitch  
Microcell Size  
The ArrayRDM−0112A20−QFN Product  
Number of  
Microcells per Pixel  
806  
ORDERING INFORMATION  
See detailed ordering and shipping information in the ordering  
information section on page 4 of this data sheet.  
Package Size  
5.2 × 10.0 × 1.85 mm  
W × L × H  
(see case outline on  
page 5 for more details)  
Output Type  
Analog  
Standard output per pixel  
PERFORMANCE SPECIFICATIONS  
Typical values are measured at 21°C. Minimum and Maximum values take  
into account operation over the full temperature range of −40°C to 105°C. All measurements made at Vbr + 7.9 V.  
Parameter  
PDE at 905 nm  
Min  
8
Typ  
14  
Max  
23  
Unit  
Comment  
%
Total Noise Rate  
< 0.05  
0.1  
40  
Mcps Total noise rate is the count of all noise events arising  
from thermal noise, crosstalk and afterpulsing. It is  
measured by counting distinct event peaks per unit  
time with no incident light and minimum threshold set  
just above the electronic noise floor. Per pixel  
Optical Crosstalk  
23  
1.1 × 10  
24  
28  
1.2 × 10  
34  
33  
1.4 × 10  
45  
%
6
6
6
Gain  
Microcell Recovery Time Constant  
Microcell Rise Time  
ns  
ps  
pF  
RC time constant  
Per pixel  
−
200  
20  
−
Terminal Capacitance  
Peak Pulsed Saturation Current  
Continuous Saturation Current  
19  
22  
3.2  
−
7.5  
mA Per pixel  
mA Per pixel  
1.4  
−
3.4  
This document contains information on a new product. Specifications and information herein are subject to change without notice.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
ARRAYRDM−0112A20/D  
September, 2020 − Rev. P7  
123456

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