5秒后页面跳转
ARRAYRDM-0116A10-DFN-TR-E PDF预览

ARRAYRDM-0116A10-DFN-TR-E

更新时间: 2024-11-07 02:50:15
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
9页 1335K
描述
Silicon Photomultipliers (SiPM), RDM-Series 1 x 16 Monolithic Array

ARRAYRDM-0116A10-DFN-TR-E 数据手册

 浏览型号ARRAYRDM-0116A10-DFN-TR-E的Datasheet PDF文件第2页浏览型号ARRAYRDM-0116A10-DFN-TR-E的Datasheet PDF文件第3页浏览型号ARRAYRDM-0116A10-DFN-TR-E的Datasheet PDF文件第4页浏览型号ARRAYRDM-0116A10-DFN-TR-E的Datasheet PDF文件第5页浏览型号ARRAYRDM-0116A10-DFN-TR-E的Datasheet PDF文件第6页浏览型号ARRAYRDM-0116A10-DFN-TR-E的Datasheet PDF文件第7页 
Silicon Photomultipliers  
(SiPM), RDM-Series 1 x 16  
Monolithic Array  
Product Preview  
ArrayRDM-0116A10-DFN  
www.onsemi.com  
The ArrayRDM0116A10DFN is a monolithic 1 × 16 array of  
Silicon Photomultiplier (SiPM) pixels based on the marketleading  
RDM process. The RDM process has been specifically developed to  
create products that give high PDE at the NIR wavelengths used for  
LiDAR and 3D ranging applications. The ArrayRDM0116A10DFN  
also features an antireflection coating on the entrance window.  
In order to meet the requirements for automotive LiDAR  
applications, this product is qualified to the AECQ102 standard and  
developed in accordance with IATF 16949.  
An evaluation board (ArrayRDM0116A10GEVB) is also  
available for this product.  
KEY SENSOR AND PACKAGE SPECIFICATIONS  
Parameter  
Silicon Process  
Number of Pixels  
Array Configuration  
Pixel Size  
Value  
Comment  
The ARRAYRDM0116A10DFN Product  
RDM  
16  
ORDERING INFORMATION  
See detailed ordering and shipping information in the ordering  
information section on page 6 of this data sheet.  
1 × 16  
0.17 × 0.49 mm  
0.55 mm  
10 mm  
Pixel Pitch  
Microcell Size  
Number of  
Microcells per Pixel  
368  
Package Size  
Output Type  
3 × 12 × 1.85 mm  
DFN Package (W × L × H)  
Analog  
Standard and Fast Output  
per Pixel  
PERFORMANCE SPECIFICATIONS  
Typical values are measured at 21°C. Minimum and Maximum (when available) values take into account operation over the full  
temperature range of 40°C to 105°C. All measurements made at Vbr + 19 V. Note that Vov and values below may change in the final  
product.  
Parameter  
PDE @ 905 nm  
Min  
Typ  
14  
Max  
Unit  
%
Comment  
Dark Count Rate  
40  
kcps  
%
Per pixel  
Optical Crosstalk  
25  
6
Gain  
0.8 × 10  
TBD  
18  
Afterpulsing Probability  
Microcell Recovery Time  
Microcell Rise Time  
Fast Output Pulse Width  
Fast Output Rise Time  
Terminal Capacitance  
ns  
ns  
ns  
ns  
pF  
RC time constant  
Per pixel  
0.25  
1
0.25  
59  
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
ARRAYRDM0116A10/D  
April, 2020 Rev. P1  

与ARRAYRDM-0116A10-DFN-TR-E相关器件

型号 品牌 获取价格 描述 数据表
ARRAYRDM-0116A10-GEVB ONSEMI

获取价格

Silicon Photomultipliers (SiPM), RDM-Series 1 x 16 Monolithic Array
ARRAYS EDI

获取价格

NIGHT VISION H.V. RECTIFIER DIODES & ARRAYS
ARRAYX-BOB3-144P ONSEMI

获取价格

Silicon Photomultiplier (SiPM) 4-Side Scaleable Arrays
ARRAYX-BOB3-16P ONSEMI

获取价格

Silicon Photomultiplier (SiPM) 4-Side Scaleable Arrays
ARRAYX-BOB3-16S ONSEMI

获取价格

Silicon Photomultiplier (SiPM) 4-Side Scaleable Arrays
ARRAYX-BOB6-64P ONSEMI

获取价格

Silicon Photomultiplier (SiPM) High Fill-Factor Arrays
ARRAYX-BOB6-64S ONSEMI

获取价格

Silicon Photomultiplier (SiPM) 4-Side Scaleable Arrays
ARRCN5-868.000MHz ABRACON

获取价格

ARR868MHZ RFID READER ANT MMCX-JW3
ARRCN5-915.000MHz ABRACON

获取价格

ARR915MHZ RFID READER ANT MMCX-JW3
ARR-DM-SA-JP DDK

获取价格

Coaxial Arrester