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ARRAYRDM-0116A10-DFN-TR

更新时间： 2024-09-16 02:49:47
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安森美 - ONSEMI /
页数 文件大小 规格书
9页 1335K
描述
Silicon Photomultipliers (SiPM), RDM-Series 1 x 16 Monolithic Array

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ARRAYRDM-0116A10-DFN-TR 数据手册

 浏览型号ARRAYRDM-0116A10-DFN-TR的Datasheet PDF文件第2页浏览型号ARRAYRDM-0116A10-DFN-TR的Datasheet PDF文件第3页浏览型号ARRAYRDM-0116A10-DFN-TR的Datasheet PDF文件第4页浏览型号ARRAYRDM-0116A10-DFN-TR的Datasheet PDF文件第5页浏览型号ARRAYRDM-0116A10-DFN-TR的Datasheet PDF文件第6页浏览型号ARRAYRDM-0116A10-DFN-TR的Datasheet PDF文件第7页 
Silicon Photomultipliers  
(SiPM), RDM-Series 1 x 16  
Monolithic Array  
Product Preview  
ArrayRDM-0116A10-DFN  
www.onsemi.com  
The ArrayRDM−0116A10−DFN is a monolithic 1 × 16 array of  
Silicon Photomultiplier (SiPM) pixels based on the market−leading  
RDM process. The RDM process has been specifically developed to  
create products that give high PDE at the NIR wavelengths used for  
LiDAR and 3D ranging applications. The ArrayRDM−0116A10−DFN  
also features an anti−reflection coating on the entrance window.  
In order to meet the requirements for automotive LiDAR  
applications, this product is qualified to the AEC−Q102 standard and  
developed in accordance with IATF 16949.  
An evaluation board (ArrayRDM−0116A10−GEVB) is also  
available for this product.  
KEY SENSOR AND PACKAGE SPECIFICATIONS  
Parameter  
Silicon Process  
Number of Pixels  
Array Configuration  
Pixel Size  
Value  
Comment  
The ARRAYRDM−0116A10−DFN Product  
RDM  
16  
ORDERING INFORMATION  
See detailed ordering and shipping information in the ordering  
information section on page 6 of this data sheet.  
1 × 16  
0.17 × 0.49 mm  
0.55 mm  
10 mm  
Pixel Pitch  
Microcell Size  
Number of  
Microcells per Pixel  
368  
Package Size  
Output Type  
3 × 12 × 1.85 mm  
DFN Package (W × L × H)  
Analog  
Standard and Fast Output  
per Pixel  
PERFORMANCE SPECIFICATIONS  
Typical values are measured at 21°C. Minimum and Maximum (when available) values take into account operation over the full  
temperature range of −40°C to 105°C. All measurements made at Vbr + 19 V. Note that Vov and values below may change in the final  
product.  
Parameter  
PDE @ 905 nm  
Min  
−
Typ  
14  
Max  
−
Unit  
%
Comment  
Dark Count Rate  
−
40  
−
kcps  
%
Per pixel  
Optical Crosstalk  
−
25  
−
6
Gain  
−
−
0.8 × 10  
TBD  
18  
Afterpulsing Probability  
Microcell Recovery Time  
Microcell Rise Time  
Fast Output Pulse Width  
Fast Output Rise Time  
Terminal Capacitance  
−
−
−
−
ns  
ns  
ns  
ns  
pF  
RC time constant  
Per pixel  
−
0.25  
1
−
−
−
−
0.25  
59  
−
−
−
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.  
© Semiconductor Components Industries, LLC, 2019  
1
Publication Order Number:  
ARRAYRDM−0116A10/D  
April, 2020 − Rev. P1  
1234567...9

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