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ARF221S14 PDF预览

ARF221S14

更新时间: 2024-11-08 22:05:47
品牌 Logo 应用领域
POSEICO 二极管快恢复二极管快速恢复二极管
页数 文件大小 规格书
4页 47K
描述
FAST RECOVERY DIODE

ARF221S14 数据手册

 浏览型号ARF221S14的Datasheet PDF文件第2页浏览型号ARF221S14的Datasheet PDF文件第3页浏览型号ARF221S14的Datasheet PDF文件第4页 
Via N. Lorenzi 8 - I 16152 GENOVA - ITALY  
Tel. int. +39/(0)10 6556549 - (0)10 6556488  
Fax Int. +39/(0)10 6442510  
Ansaldo Trasporti s.p.a.  
Unita' Semiconduttori  
ANSALDO  
Tx 270318 ANSUSE I -  
FAST RECOVERY DIODE  
ARF221  
Repetitive voltage up to  
1400 V  
415 A  
5 kA  
Mean forward current  
Surge current  
FINAL SPECIFICATION  
ott 97 - ISSUE : 02  
Tj  
[°C]  
Symbol  
Characteristic  
Conditions  
Value  
Unit  
BLOCKING  
V RRM  
V RSM  
I RRM  
Repetitive peak reverse voltage  
Non-repetitive peak reverse voltage  
Repetitive peak reverse current  
125 1400  
125 1500  
V
V
V=VRRM  
125  
50  
mA  
CONDUCTING  
I F (AV)  
Mean forward current  
180° sin ,50 Hz, Th=55°C, double side cooled  
180° square,50 Hz,Th=55°C,double side cooled  
415  
A
I F (AV)  
I FSM  
I² t  
Mean forward current  
Surge forward current  
I² t  
410  
A
kA  
Sine wave, 10 ms  
125  
4.5  
reapplied reverse voltage up to 50% VRSM  
101 x1E3  
1.47  
A²s  
V
V FM  
V F(TO)  
r F  
Forward voltage  
Threshold voltage  
Forward slope resistance  
Forward current = 600 A  
125  
125  
125  
1.05  
V
0.70  
mohm  
SWITCHING  
t rr  
Q rr  
I rr  
s
Reverse recovery time  
Reverse recovery charge  
Peak reverse recovery current  
Softness (s-factor), min  
Peak forward recovery  
I F  
di/dt =  
VR  
=
200 A  
40 A/µs  
50 V  
2.0  
50  
50  
µs  
µC  
A
125  
=
V FR  
V
MOUNTING  
R th(j-h)  
T j  
Thermal impedance  
Operating junction temperature  
Mounting force  
Junction to heatsink, double side cooled  
95  
°C/kW  
°C  
-30 / 125  
4.5 / 5.0  
55  
F
kN  
Mass  
g
ORDERING INFORMATION : ARF221 S 14  
VRRM/100  
standard specification  

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