5秒后页面跳转
AR1F3P PDF预览

AR1F3P

更新时间: 2024-09-14 22:05:51
品牌 Logo 应用领域
日电电子 - NEC 晶体小信号双极晶体管开关
页数 文件大小 规格书
6页 98K
描述
on-chip resistor PNP silicon epitaxial transistor

AR1F3P 技术参数

生命周期:Obsolete包装说明:SC-43B, 3 PIN
Reach Compliance Code:unknown风险等级:5.84
Is Samacsys:N其他特性:BUILT-IN BIAS RESISTOR RATIO IS 4.54
最大集电极电流 (IC):1 A集电极-发射极最大电压:60 V
配置:SINGLE WITH BUILT-IN RESISTOR最小直流电流增益 (hFE):50
JEDEC-95代码:TO-92JESD-30 代码:O-PBCY-T3
元件数量:1端子数量:3
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:CYLINDRICAL极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:BOTTOM
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

AR1F3P 数据手册

 浏览型号AR1F3P的Datasheet PDF文件第2页浏览型号AR1F3P的Datasheet PDF文件第3页浏览型号AR1F3P的Datasheet PDF文件第4页浏览型号AR1F3P的Datasheet PDF文件第5页浏览型号AR1F3P的Datasheet PDF文件第6页 
DATA SHEET  
COMPOUND TRANSISTOR  
AR1 SERIES  
on-chip resistor PNP silicon epitaxial transistor  
For mid-speed switching  
PACKAGE DRAWING (UNIT: mm)  
FEATURES  
High current drives such as IC output and actuator available  
On-chip bias resistor  
Low power consumption during drive  
AR1 SERIES LISTS  
R1 (K)  
R2 (K)  
1.0  
10  
Products  
AR1A3M  
AR1F3P  
AR1L3N  
AR1A4M  
AR1L2Q  
AR1F2Q  
AR1A4A  
1.0  
2.2  
4.7  
10  
10  
Electrode Connection  
10  
1. Emitter  
2. Collector JEDEC: TO-92  
3. Base IEC : PA33  
EIAJ : SC-43B  
0.47  
0.22  
4.7  
2.2  
10  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Base current (DC)  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
IB(DC)  
PT  
Ratings  
60  
Unit  
V
60  
V
10  
V
1.0  
A
2.0  
A
0.02  
750  
A
Total power dissipation  
Junction temperature  
mW  
°C  
°C  
Tj  
150  
55 to +150  
Storage temperature  
Tstg  
* PW 10 ms, duty cycle 50 %  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D16172EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©

与AR1F3P相关器件

型号 品牌 获取价格 描述 数据表
AR1F3P-AZ NEC

获取价格

暂无描述
AR1FD VISHAY

获取价格

Surface-Mount Fast Avalanche Rectifiers
AR1FJHM3/H VISHAY

获取价格

Surface-Mount Fast Avalanche Rectifiers
AR1FJHM3/I VISHAY

获取价格

Surface-Mount Fast Avalanche Rectifiers
AR1FJ-M3/H VISHAY

获取价格

Surface-Mount Fast Avalanche Rectifiers
AR1FJ-M3/I VISHAY

获取价格

Surface-Mount Fast Avalanche Rectifiers
AR1KL.25XX TTELEC

获取价格

1-13/16 Diameter 10-Turn Wirewound Precision Potentiometer
AR1L2Q NEC

获取价格

on-chip resistor PNP silicon epitaxial transistor
AR1L3N NEC

获取价格

on-chip resistor PNP silicon epitaxial transistor
AR1L3N-AZ NEC

获取价格

Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, SC