AR1L2Q

更新时间： 2024-11-05 22:05:51

品牌	Logo	应用领域
日电电子 - NEC		晶体晶体管开关
页数	文件大小	规格书
6页	98K
描述
on-chip resistor PNP silicon epitaxial transistor

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中文翻译

获取价格

技术参数
数据手册

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AR1L2Q 技术参数

生命周期：	Obsolete	包装说明：	SC-43B, 3 PIN
Reach Compliance Code：	unknown	风险等级：	5.84
Is Samacsys：	N	其他特性：	BUILT-IN BIAS RESISTOR RATIO IS 10
最大集电极电流 (IC)：	1 A	集电极-发射极最大电压：	60 V
配置：	SINGLE WITH BUILT-IN RESISTOR	最小直流电流增益 (hFE)：	50
JEDEC-95代码：	TO-92	JESD-30 代码：	O-PBCY-T3
元件数量：	1	端子数量：	3
封装主体材料：	PLASTIC/EPOXY	封装形状：	ROUND
封装形式：	CYLINDRICAL	极性/信道类型：	PNP
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	BOTTOM
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

AR1L2Q 数据手册

DATA SHEET

COMPOUND TRANSISTOR

AR1 SERIES

on-chip resistor PNP silicon epitaxial transistor

For mid-speed switching

PACKAGE DRAWING (UNIT: mm)

FEATURES

•

High current drives such as IC output and actuator available

On-chip bias resistor

Low power consumption during drive

AR1 SERIES LISTS

R¹(KΩ)

R²(KΩ)

1.0

Products

AR1A3M

AR1F3P

AR1L3N

AR1A4M

AR1L2Q

AR1F2Q

AR1A4A

1.0

2.2

4.7

Electrode Connection

1. Emitter

2. Collector JEDEC: TO-92

3. Base IEC : PA33

EIAJ : SC-43B

0.47

0.22

−

4.7

2.2

ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

Parameter

Collector to base voltage

Collector to emitter voltage

Emitter to base voltage

Collector current (DC)

Collector current (Pulse)

Base current (DC)

Symbol

V^CBO

V^CEO

V^EBO

I^C(DC)

I^C(pulse)*

I^B(DC)

P^T

Ratings

−60

Unit

−60

−10

−1.0

−2.0

−0.02

750

Total power dissipation

Junction temperature

°C

T^j

150

−55 to +150

Storage temperature

T^stg

* PW ≤ 10 ms, duty cycle ≤ 50 %

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16172EJ1V0DS00 (1st edition)

Date Published April 2002 N CP(K)

Printed in Japan

2002

1998

12 3 4 5 6

中文翻译

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