Datasheet > APTM10HM19FT3G-Module

APTM10HM19FT3G-Module

更新时间： 2024-11-25 14:52:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	333K
描述
FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse diodeAvalan

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APTM10HM19FT3G

V_DSS= 100V

Full - Bridge

MOSFET Power Module

_DSon= 19m typ @ Tj = 25°C

I_D= 70A @ Tc = 25°C

Application



Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features



Power MOS V^®FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic diode

Avalanche energy rated

Very rugged



Kelvin source for easy drive

Very low stray inductance

Internal thermistor for temperature monitoring

Benefits



Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting



Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …



RoHS Compliant

All ratings @ T_j= 25°C unless otherwise specified

Absolute maximum ratings (per MOSFET)

Symbol

Parameter

Drain - Source Voltage

Max ratings

Unit

V_DSS

100

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

300

±30

m

P_D

I_AR

E_AR

E_AS

Power Dissipation

T_c= 25°C

208

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

1500

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 - 7

www.microsemi.com

12 3 4 5 6 7

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