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APTM10SKM02 PDF预览

APTM10SKM02

更新时间: 2024-11-24 04:04:27
品牌 Logo 应用领域
ADPOW 斩波器
页数 文件大小 规格书
6页 299K
描述
Buck chopper MOSFET Power Module

APTM10SKM02 技术参数

生命周期:Transferred包装说明:FLANGE MOUNT, R-XUFM-X5
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.6其他特性:AVALANCHE RATED
雪崩能效等级(Eas):3000 mJ外壳连接:ISOLATED
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (ID):495 A最大漏源导通电阻:0.0025 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X5
元件数量:1端子数量:5
工作模式:ENHANCEMENT MODE封装主体材料:UNSPECIFIED
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):1900 A
认证状态:Not Qualified表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

APTM10SKM02 数据手册

 浏览型号APTM10SKM02的Datasheet PDF文件第2页浏览型号APTM10SKM02的Datasheet PDF文件第3页浏览型号APTM10SKM02的Datasheet PDF文件第4页浏览型号APTM10SKM02的Datasheet PDF文件第5页浏览型号APTM10SKM02的Datasheet PDF文件第6页 
APTM10SKM02  
VDSS = 100V  
Buck chopper  
RDSon = 2.25mtyp @ Tj = 25°C  
MOSFET Power Module  
ID = 495A @ Tc = 25°C  
Application  
VBUS  
Q1  
AC and DC motor control  
Switched Mode Power Supplies  
G1  
Features  
OUT  
Power MOS V® MOSFETs  
S1  
-
-
-
-
-
Low RDSon  
CR2  
Low input and Miller capacitance  
Low gate charge  
Avalanche energy rated  
Very rugged  
0/VBUS  
Kelvin source for easy drive  
Very low stray inductance  
-
-
Symmetrical design  
M5 power connectors  
High level of integration  
G1  
VBUS  
0/VBUS  
OUT  
Benefits  
S1  
Outstanding performance at high frequency operation  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Low profile  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
100  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
V
Tc = 25°C  
495  
ID  
Continuous Drain Current  
A
Tc = 80°C  
370  
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
1900  
±30  
V
m  
W
2.5  
PD  
IAR  
EAR  
EAS  
Maximum Power Dissipation  
Avalanche current (repetitive and non repetitive)  
Repetitive Avalanche Energy  
Single Pulse Avalanche Energy  
Tc = 25°C  
1250  
100  
50  
A
mJ  
3000  
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.  
APT website – http://www.advancedpower.com  
1 - 6  

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