Datasheet > APTM10TAM09FPG-Module

APTM10TAM09FPG-Module

更新时间： 2024-11-25 14:55:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	546K
描述
FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse diodeAvalan

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APTM10TAM09FPG-Module 数据手册

浏览型号APTM10TAM09FPG-Module的Datasheet PDF文件第2页

浏览型号APTM10TAM09FPG-Module的Datasheet PDF文件第3页

浏览型号APTM10TAM09FPG-Module的Datasheet PDF文件第4页

浏览型号APTM10TAM09FPG-Module的Datasheet PDF文件第5页

APTM10TAM09FPG

V_DSS= 100V

Triple phase leg

MOSFET Power Module

_DSon= 09mΩ typ @ Tj = 25°C

I_D= 139A @ Tc = 25°C

Application

Welding converters

VBUS1

VBUS2

VBUS3

•

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Power MOS V^®FREDFETs

Low R_DSon

Low input and Miller capacitance

Low gate charge

Fast intrinsic diode

Avalanche energy rated

Very rugged

0/VBUS1

0/VBUS2

0/VBUS3

•

Kelvin source for easy drive

Very low stray inductance

Symmetrical design

Lead frames for power connections

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Very low (12mm) profile

Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

Module can be configured as a three phase bridge

Module can be configured as a boost followed by a

full bridge

•

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

100

139

100

430

±30

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

mΩ

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

T_c= 25°C

390

100

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 7

www.microsemi.com

12 3 4 5 6 7

中文翻译

下载PDF

与APTM10TAM09FPG-Module相关器件

型号	品牌	获取价格	描述	数据表
APTM10TAM19FP	ADPOW	获取价格	Triple phase leg MOSFET Power Module
APTM10TAM19FPG	MICROSEMI	获取价格	Triple phase leg MOSFET Power Module
APTM10TAM19FPG-Module	MICROCHIP	获取价格	FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse dio
APTM10TDUM09P	ADPOW	获取价格	Triple dual common source MOSFET Power Module
APTM10TDUM09PG	MICROSEMI	获取价格	Triple dual common source MOSFET Power Module
APTM10TDUM19P	ADPOW	获取价格	Triple dual common source MOSFET Power Module
APTM10TDUM19PG	MICROSEMI	获取价格	Triple dual common source MOSFET Power Module
APTM10UM01FA	ADPOW	获取价格	Single Switch MOSFET Power Module
APTM10UM01FAG	MICROSEMI	获取价格	Single Switch MOSFET Power Module
APTM10UM01FAG-Module	MICROCHIP	获取价格	FREDFETsLow RDSonLow input and Miller capacitanceLow gate chargeFast intrinsic reverse dio