Datasheet > APTGT75A120T1G

APTGT75A120T1G

更新时间： 2024-11-30 06:37:31

品牌	Logo	应用领域
美高森美 - MICROSEMI		电源电路双极性晶体管
页数	文件大小	规格书
5页	277K
描述
Phase leg Fast Trench + Field Stop IGBT® Power Module

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中文翻译

获取价格

数据手册

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APTGT75A120T1G 数据手册

APTGT75A120T1G

Phase leg

Fast Trench + Field Stop IGBT^®

Power Module

V_CES= 1200V

I_C= 75A @ Tc = 80°C

Application

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

CR1

CR2

Features

Fast Trench + Field Stop IGBT^®Technology

•

NTC

Low voltage drop

Low tail current

Switching frequency up to 20 kHz

Soft recovery parallel diodes

Low diode VF

Low leakage current

RBSOA and SCSOA rated

•

Very low stray inductance

Symmetrical design

•

Internal thermistor for temperature monitoring

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Low profile

RoHS Compliant

Pins 1/2 ; 3/4 ; 5/6 must be shorted together

Absolute maximum ratings

Symbol

Parameter

Max ratings

1200

110

Unit

V_CES

Collector - Emitter Breakdown Voltage

T_C= 25°C

T_C= 80°C

T_C= 25°C

I_C

Continuous Collector Current

I_CM

V_GE

P_D

Pulsed Collector Current

Gate – Emitter Voltage

Maximum Power Dissipation

175

±20

T_C= 25°C

T_j= 125°C

357

RBSOA Reverse Bias Safe Operating Area

150A @ 1150V

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

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