Datasheet > APTC80TA15PG-Module

APTC80TA15PG-Module

更新时间： 2024-11-28 14:53:31

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	580K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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APTC80TA15PG-Module 数据手册

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APTC80TA15PG

V_DSS= 800V

Triple phase leg

Super Junction MOSFET

Power Module

_DSon= 150mΩ max @ Tj = 25°C

I_D= 28A @ Tc = 25°C

Application

VBUS1

VBUS2

VBUS3

•

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Features

•

Ultra low R_DSon

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

Very rugged

0/VBUS1

0/VBUS2

0/VBUS3

•

Kelvin source for easy drive

Very low stray inductance

Symmetrical design

Lead frames for power connections

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Very low (12mm) profile

Each leg can be easily paralleled to achieve a phase

leg of three times the current capability

Module can be configured as a three phase bridge

Module can be configured as a boost followed by a

full bridge

•

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

800

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

110

±30

150

mΩ

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

T_c= 25°C

277

0.5

670

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

1 – 7

www.microsemi.com

12 3 4 5 6 7

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