Datasheet > APTC80TDU15PG-Module

APTC80TDU15PG-Module

更新时间： 2024-11-28 14:53:27

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
7页	576K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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APTC80TDU15PG-Module 数据手册

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APTC80TDU15PG

Triple dual Common Source

Super Junction MOSFET

Power Module

V_DSS= 800V

_DSon= 150mΩ max @ Tj = 25°C

I_D= 28A @ Tc = 25°C

Application

AC Switches

•

Switched Mode Power Supplies

Uninterruptible Power Supplies

Features

S1/S2

S3/S4

S5/S6

•

Ultra low R_DSon

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

Very rugged

•

Kelvin source for easy drive

Very low stray inductance

Symmetrical design

Lead frames for power connections

•

High level of integration

Benefits

•

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

•

Very low (12mm) profile

Each leg can be easily paralleled to achieve a dual

common source configuration of three times the

current capability

•

RoHS Compliant

Absolute maximum ratings

Symbol

Parameter

Max ratings

Unit

V_DSS

Drain - Source Breakdown Voltage

800

T_c= 25°C

T_c= 80°C

I_D

Continuous Drain Current

I_DM

V_GS

R_DSon

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

110

±30

150

mΩ

P_D

I_AR

E_AR

E_AS

Maximum Power Dissipation

T_c= 25°C

277

0.5

670

Avalanche current (repetitive and non repetitive)

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

1 – 7

www.microsemi.com

12 3 4 5 6 7

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