Datasheet > APTCV40H60CT1G-Module

APTCV40H60CT1G-Module

更新时间： 2024-11-30 14:53:03

品牌	Logo	应用领域
美国微芯 - MICROCHIP		/
页数	文件大小	规格书
11页	536K
描述
Super junction MOSFETUltra low RDSonLow Miller capacitanceUltra low gate chargeAvalanche energy ra

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APTCV40H60CT1G-Module 数据手册

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APTCV40H60CT1G

Trench & Field Stop^®IGBT Q1, Q3:

Full - Bridge

CoolMOS & Trench + Field Stop^®IGBT

Power module

_CES= 600V ; I_C= 50A @ Tc = 80°C

CoolMOS™ Q2, Q4:

V_DSS= 600V ; I_D= 36A @ Tc = 25°C

Application

 Solar converter

Features

CR1

 Q2, Q4 CoolMOS™

Ultra low R_DSon

CR3

Low Miller capacitance

Ultra low gate charge

Avalanche energy rated

Very rugged

Fast intrinsic diode

 Q1, Q3 Trench & Field Stop IGBT^®

- Low voltage drop

NTC

- Switching frequency up to 20 kHz

- RBSOA & SCSOA rated

Top switches : Trench + Field Stop IGBT^®

Bottom switches : CoolMOS™

Low tail current



SiC Schottky Diode (CR1, CR3)

Zero reverse recovery

Zero forward recovery

Temperature Independent switching behavior

Positive temperature coefficient on VF

 Very low stray inductance

 Internal thermistor for temperature monitoring

 High level of integration

Benefits



Outstanding performance at high frequency

operation



Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal

for easy PCB mounting

Pins 3/4 must be shorted together



Low profile

RoHS Compliant

These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

All ratings @ T_j= 25°C unless otherwise specified

1 - 11

www.microsemi.com

12 3 4 5 6 7...11

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