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APTCV90TL12T3G PDF预览

APTCV90TL12T3G

更新时间: 2024-11-30 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体电源电路晶体管功率控制双极性晶体管局域网
页数 文件大小 规格书
9页 240K
描述
Three level inverter CoolMOS & Trench + Field Stop IGBT4 Power Module

APTCV90TL12T3G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT PACKAGE-32针数:32
Reach Compliance Code:compliant风险等级:5.73
Is Samacsys:N外壳连接:ISOLATED
最大集电极电流 (IC):80 A集电极-发射极最大电压:1200 V
配置:COMPLEX门极-发射极最大电压:20 V
JESD-30 代码:R-XUFM-X32元件数量:4
端子数量:32最高工作温度:175 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):280 W
认证状态:Not Qualified子类别:Insulated Gate BIP Transistors
表面贴装:NO端子形式:UNSPECIFIED
端子位置:UPPER处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:POWER CONTROL晶体管元件材料:SILICON
标称断开时间 (toff):370 ns标称接通时间 (ton):80 ns
VCEsat-Max:2.2 VBase Number Matches:1

APTCV90TL12T3G 数据手册

 浏览型号APTCV90TL12T3G的Datasheet PDF文件第2页浏览型号APTCV90TL12T3G的Datasheet PDF文件第3页浏览型号APTCV90TL12T3G的Datasheet PDF文件第4页浏览型号APTCV90TL12T3G的Datasheet PDF文件第5页浏览型号APTCV90TL12T3G的Datasheet PDF文件第6页浏览型号APTCV90TL12T3G的Datasheet PDF文件第7页 
APTCV90TL12T3G  
Trench & Field Stop IGBT4 Q2, Q3:  
VCES = 1200V ; IC = 50A @ Tc = 80°C  
Three level inverter  
CoolMOS & Trench + Field Stop IGBT4  
Power Module  
CoolMOS™ Q1, Q4:  
VDSS = 900V ; ID = 23A @ Tc = 80°C  
Application  
Solar converter  
Uninterruptible Power Supplies  
Features  
Q2, Q3 Trench + Field Stop IGBT 4 Technology  
- Low voltage drop  
- Low leakage current  
- Low switching losses  
Q1, Q4 CoolMOS™  
- Ultra low RDSon  
- Low Miller capacitance  
- Ultra low gate charge  
- Avalanche energy rated  
- Very rugged  
Kelvin emitter for easy drive  
Very low stray inductance  
High level of integration  
Internal thermistor for temperature monitoring  
28 27 26 25  
23 22  
20 19 18  
Benefits  
29  
30  
16  
15  
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
Low profile  
31  
32  
14  
13  
RoHS Compliant  
2
3
4
7
8
10 11  
12  
All multiple inputs and outputs must be shorted together  
Example: 10/11/12 ; 7/8 …  
All ratings @ Tj = 25°C unless otherwise specified  
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.  
See application note APT0502 on www.microsemi.com  
1 - 9  
www.microsemi.com  

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