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APT58M50JCU3 PDF预览

APT58M50JCU3

更新时间: 2024-11-16 06:37:27
品牌 Logo 应用领域
美高森美 - MICROSEMI 晶体二极管晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
5页 112K
描述
ISOTOP Buck chopper MOSFET + SiC chopper diode Power module

APT58M50JCU3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:ISOTOP包装说明:ROHS COMPLIANT, ISOTOP-4
针数:4Reach Compliance Code:compliant
ECCN代码:EAR99风险等级:5.19
Is Samacsys:N其他特性:AVALANCHE RATED
外壳连接:ISOLATED配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:500 V最大漏极电流 (Abs) (ID):58 A
最大漏极电流 (ID):58 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-XUFM-X4
元件数量:1端子数量:4
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:UNSPECIFIED封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):543 W
最大脉冲漏极电流 (IDM):270 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子形式:UNSPECIFIED端子位置:UPPER
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

APT58M50JCU3 数据手册

 浏览型号APT58M50JCU3的Datasheet PDF文件第2页浏览型号APT58M50JCU3的Datasheet PDF文件第3页浏览型号APT58M50JCU3的Datasheet PDF文件第4页浏览型号APT58M50JCU3的Datasheet PDF文件第5页 
APT58M50JCU3  
ISOTOP® Buck chopper  
MOSFET + SiC chopper diode  
Power module  
VDSS = 500V  
RDSon = 65mΩ Max @ Tj = 25°C  
ID = 58A @ Tc = 25°C  
Application  
D
AC and DC motor control  
Switched Mode Power Supplies  
Features  
Power MOS 8™ MOSFET  
G
-
-
-
-
Low RDSon  
Low input and Miller capacitance  
Low gate charge  
S
Avalanche energy rated  
SiC Schottky Diode  
-
-
-
-
Zero reverse recovery  
Zero forward recovery  
Temperature Independent switching behavior  
Positive temperature coefficient on VF  
A
ISOTOP® Package (SOT-227)  
Very low stray inductance  
High level of integration  
A
S
Benefits  
Outstanding performance at high frequency  
operation  
D
G
Stable temperature behavior  
Very rugged  
Direct mounting to heatsink (isolated package)  
Low junction to case thermal resistance  
Easy paralleling due to positive TC of VCEsat  
RoHS Compliant  
ISOTOP®  
Absolute maximum ratings  
Symbol  
Parameter  
Max ratings  
Unit  
VDSS  
Drain - Source Breakdown Voltage  
500  
58  
43  
V
Tc = 25°C  
Tc = 80°C  
ID  
Continuous Drain Current  
A
IDM  
VGS  
RDSon  
Pulsed Drain current  
Gate - Source Voltage  
Drain - Source ON Resistance  
270  
±30  
65  
V
mΩ  
W
PD  
Maximum Power Dissipation  
Tc = 25°C  
543  
IAR  
Avalanche current (repetitive and non repetitive)  
42  
A
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note  
APT0502 on www.microsemi.com  
1 - 5  
www.microsemi.com  

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