APT6010B2FLL

更新时间： 2024-11-16 08:33:27

品牌	Logo	应用领域
ADPOW		/
页数	文件大小	规格书
5页	165K
描述
POWER MOS 7 FREDFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT6010B2FLL 数据手册

APT6010B2FLL

APT6010LFLL

600V 54A 0.100Ω

B2FLL

POWER MOS 7 FREDFET

T-MAX™

Power MOS 7^®is a new generation of low loss, high voltage, N-Channel

enhancement mode power MOSFETS. Both conduction and switching

losses are addressed with Power MOS 7^®by significantly lowering R_DS(ON)

and Q_g. Power MOS 7^®combines lower conduction and switching losses

along with exceptionally fast switching speeds inherent with APT's

patented metal gate structure.

TO-264

LFLL

• Lower Input Capacitance

• Lower Miller Capacitance

• Lower Gate Charge, Qg

• Increased Power Dissipation

• Easier To Drive

• Popular T-MAX™ or TO-264 Package

•

FAST RECOVERY BODY DIODE

MAXIMUM RATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT6010B2FLL_LFLL

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

216

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

Watts

W/°C

690

P_D

5.52

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

600

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 27A)

0.100

100

500

±100

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

µA

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4 5

中文翻译

下载PDF

与APT6010B2FLL相关器件

型号	品牌	获取价格	描述	数据表
APT6010B2FLLE3	MICROSEMI	获取价格	Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010B2FLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010B2LL	MICROSEMI	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6010B2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6010B2LLE3	MICROSEMI	获取价格	Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010B2LLG	MICROSEMI	获取价格	POWER MOS 7 MOSFET
APT6010JFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6010JFLL	MICROSEMI	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6010JFLLE3	MICROSEMI	获取价格	Power Field-Effect Transistor, 47A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010JLL	MICROSEMI	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

与APT6010B2FLL相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

13
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

7
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

35
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

31

产品中心

服务支持

精选活动

关于我们

帮助中心

APT6010B2FLL

APT6010B2FLL 数据手册

与APT6010B2FLL相关器件

与APT6010B2FLL相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

APT6010B2FLL

APT6010B2FLL 数据手册

与APT6010B2FLL相关器件

与APT6010B2FLL相关文章

您还可以找

您在本页遇到什么问题？