Datasheet > APT-6009

APT-6009

更新时间： 2024-11-17 03:31:03

品牌	Logo	应用领域
ABRACON		局域网
页数	文件大小	规格书
1页	39K
描述
Datacom Transformer, LAN; WDN Application(s), 2:1:1, DIP-6

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

APT-6009 数据手册

PULSE TRANSFORMER

APT-6000 SERIES

FEATURES:

COMMON APPLICATIONS:

• Low Profile 6 Pin DIP Package

• Low Leakage Inductance

• Low Interwinding Capacitance

• High Isolation Voltage

• Meets MIL-STD 21038

• Lan, WDN

• Computers

• SMPS Control Circuit

STANDARD SPECIFICATIONS ^@25° C

Part

Turns

Ratio

Pulse

Leakage

Primary

PRI/SEC

CW/W

Primary

DCR

Secondary

DCR

Tertiary

DCR

HI-POT

(VRMS Min)

Package

Number

Inductance Inductance ET-Constant

(µH ±20%) (µH MAX) (V-us Min) (PF MAX) (OHMS Max) (OHMS Max) (OHMS Max)

(± 5%)

APT-6000 Series

APT-6001

APT-6002

APT-6003

APT-6004

APT-6005

APT-6006

APT-6007

APT-6008

APT-6009

APT-6010

APT-6011

APT-6012

1 : 1

500

2000

200

500

2000

200

500

2000

0.3

0.4

0.5

0.8

0.3

0.4

0.5

0.8

1.3

0.9

2.5

3.2

5.0

8.5

16.0

5.0

5.2

8.5

16.0

5.0

8.5

0.9

1.3

2.5

0.9

1.3

2.5

0.9

1.4

2.5

0.9

1.3

2.5

0.9

1.3

2.5

0.5

0.4

0.8

1.4

500

1 : 1

1CT : 1CT

2 : 1 : 1

3 : 1 : 1

4 : 2 : 1

0.5

0.4

0.5

0.8

16.0

TECHNICAL INFORMATION:

• Operating Temperature: -20°C to +70°C

• Storage Temperature: -55°C to +125°C

PHYSICAL CHARACTERISTICS

TEST CIRCUIT:

Note: All specifications subject to change without notice.

SCHEMATICS:

ABRACON IS

- 92 -

29 Journey • Aliso Viejo, CA 92656 • USA

(949) 448-7070 FAX: (949) 448-8484

abracon.com • INTERNET ADDRESS: www.abracon.com

ISO 9001 / QS 9000

CERTIFIED

•

E-MAIL: abinfo

中文翻译

下载PDF

与APT-6009相关器件

型号	品牌	获取价格	描述	数据表
APT60-101DN	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 17.5A I(D) \| CHIP
APT6010B2FLL	MICROSEMI	获取价格	POWER MOS 7 FREDFET
APT6010B2FLL	ADPOW	获取价格	POWER MOS 7 FREDFET
APT6010B2FLLE3	MICROSEMI	获取价格	Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010B2FLLG	MICROSEMI	获取价格	Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010B2LL	MICROSEMI	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6010B2LL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6010B2LLE3	MICROSEMI	获取价格	Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta
APT6010B2LLG	MICROSEMI	获取价格	POWER MOS 7 MOSFET
APT6010JFLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po