Datasheet > APT6011B2VFRG

APT6011B2VFRG

更新时间： 2024-11-07 04:07:15

品牌	Logo	应用领域
美高森美 - MICROSEMI		/
页数	文件大小	规格书
4页	150K
描述
Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TMAX-3

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APT6011B2VFRG 数据手册

APT6011B2VFR

APT6011LVFR

600V 49A 0.110Ω

B2VFR

POWER MOS V^®FREDFET

Power MOS V^®is a new generation of high voltage N-Channel enhancement

mode power MOSFETs. This new technology minimizes the JFET effect,

increases packing density and reduces the on-resistance. Power MOS V^®

also achieves faster switching speeds through optimized gate layout.

T-MAX™

TO-264

LVFR

• T-MAX™ or TO-264 Package

• Avalanche Energy Rated

FAST RECOVERY BODY DIODE

•

• Faster Switching

• Lower Leakage

MAXIMUMRATINGS

Symbol Parameter

All Ratings: T = 25°C unless otherwise specified.

APT6011B2VFR_LVFR

UNIT

V_DSS

I_D

Drain-Source Voltage

600

Volts

Continuous Drain Current @ T_C= 25°C

Amps

Volts

I_DM

Pulsed Drain Current

196

V_GS

V_GSM

Gate-Source Voltage Continuous

Gate-Source Voltage Transient

Total Power Dissipation @ T_C= 25°C

Linear Derating Factor

±30

±40

Watts

W/°C

625

P_D

5.00

-55 to 150

300

T_J,T_STG

T_L

Operating and Storage Junction Temperature Range

°C

Amps

Lead Temperature: 0.063" from Case for 10 Sec.

I_AR

Avalanche Current

(Repetitive and Non-Repetitive)

E_AR

E_AS

Repetitive Avalanche Energy

Single Pulse Avalanche Energy

3000

STATICELECTRICALCHARACTERISTICS

Symbol Characteristic / Test Conditions

MIN

TYP

MAX

UNIT

Volts

Ohms

BV_DSS

R_DS(on)

Drain-Source Breakdown Voltage (V_GS= 0V, I_D= 250µA)

600

Drain-Source On-State Resistance

(V_GS= 10V, I_D= 24.5A)

0.110

250

Zero Gate Voltage Drain Current (V_DS= 600V, V_GS= 0V)

Zero Gate Voltage Drain Current (V_DS= 480V, V_GS= 0V, T_C= 125°C)

Gate-Source Leakage Current (V_GS= ±30V, V_DS= 0V)

Gate Threshold Voltage (V_DS= V_GS, I_D= 2.5mA)

I_DSS

µA

1000

±100

I_GSS

V_GS(th)

Volts

CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.

APT Website - http://www.advancedpower.com

12 3 4

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APT6011B2VFRG 替代型号

型号	品牌	替代类型	描述	数据表
APT6013B2LLG	MICROSEMI	类似代替	Power Field-Effect Transistor, 43A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Met
APT6017B2FLLG	MICROSEMI	功能相似	Power Field-Effect Transistor, 35A I(D), 600V, 0.17ohm, 1-Element, N-Channel, Silicon, Met
APT8020B2FLLG	MICROSEMI	功能相似	Power Field-Effect Transistor, 38A I(D), 800V, 0.22ohm, 1-Element, N-Channel, Silicon, Met

与APT6011B2VFRG相关器件

型号	品牌	获取价格	描述	数据表
APT6011B2VR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011B2VR_04	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011B2VRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
APT6011LVFR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011LVFRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
APT6011LVR	ADPOW	获取价格	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
APT6011LVRG	MICROSEMI	获取价格	Power Field-Effect Transistor, 49A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Met
APT-6012	ABRACON	获取价格	Datacom Transformer, LAN; WDN Application(s), 4:2:1, DIP-6
APT6013B2FLL	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po
APT6013B2FLL_04	ADPOW	获取价格	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po

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