是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | compliant |
风险等级: | 5.12 | Is Samacsys: | N |
其他特性: | FAST SWITCHING, HIGH VOLTAGE | 雪崩能效等级(Eas): | 3000 mJ |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (ID): | 54 A | 最大漏源导通电阻: | 0.1 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSIP-T3 |
JESD-609代码: | e1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 216 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子面层: | TIN SILVER COPPER |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
APT6010B2LL | MICROSEMI |
功能相似 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
APT6010JFLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6010JFLL | MICROSEMI |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6010JFLLE3 | MICROSEMI |
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Power Field-Effect Transistor, 47A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT6010JLL | MICROSEMI |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6010JLL | ADPOW |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po | |
APT6010LFLL | MICROSEMI |
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POWER MOS 7 FREDFET | |
APT6010LFLL | ADPOW |
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POWER MOS 7 FREDFET | |
APT6010LFLLE3 | MICROSEMI |
获取价格 |
Power Field-Effect Transistor, 54A I(D), 600V, 0.1ohm, 1-Element, N-Channel, Silicon, Meta | |
APT6010LFLLG | MICROSEMI |
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POWER MOS 7 FREDFET | |
APT6010LLL | MICROSEMI |
获取价格 |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode po |